Zobrazeno 1 - 10
of 20
pro vyhledávání: '"John G. Pasko"'
Autor:
Jagmohan Bajaj, John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, R. E. De Wames, W. E. Tennant
Publikováno v:
Journal of Electronic Materials. 24:1067-1076
Extensive material, device, and focal plane array (FPA) reproducibility data are presented to demonstrate significant advances made in the molecular beam epitaxial (MBE) HgCdTe technology. Excellent control of the composition, growth rate, layer thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e4f0ce5f8c091553f6d449683504cd
https://doi.org/10.1007/bf02653055
https://doi.org/10.1007/bf02653055
Publikováno v:
Journal of Electronic Materials. 24:681-684
Measurements of 77K RoA and 300K reverse bias dynamic impedance (RdA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f02a0a00c823a559b8758418f08e2c
https://doi.org/10.1007/bf02657978
https://doi.org/10.1007/bf02657978
Publikováno v:
Journal of Electronic Materials. 24:609-615
Temperature and time dependent Hg-annealing studies for arsenic activation have been carried out on As-doped molecular beam epitaxy HgCdTe eitherin situ or by ion implantation to determine the extent of arsenic activation in the single layer. Enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e346a9738c7221583263b087a348a6a2
https://doi.org/10.1007/bf02657969
https://doi.org/10.1007/bf02657969
Autor:
Majid Zandian, G. M. Williams, W. E. Tennant, S. H. Shin, Jose M. Arias, R. E. De Wames, John G. Pasko, L. O. Bubulac
Publikováno v:
Journal of Electronic Materials. 22:1049-1053
We recently succeeded in fabricating planar Hg1−yCdyTe/Hg1−xCdxTe (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc8f59dea5838fd20ef2c9d7e1a5e72
https://doi.org/10.1007/bf02817523
https://doi.org/10.1007/bf02817523
Publikováno v:
Journal of Electronic Materials. 22:1039-1047
We report the results of annealing effects on the As-doped alloy HgCdTe grown by molecular beam epitaxy (MBE), arsenic (As) diffusion in HgCdTe from Hg-rich solutions at low temperatures, and As ion implantation at room temperature. Hall-effect measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03438beafb0d9f9e37dd72f7614a31e
https://doi.org/10.1007/bf02817522
https://doi.org/10.1007/bf02817522
Autor:
G. Hildebrandt, Mark Farris, Kadri Vural, Craig A. Cabelli, Jagmohan Bajaj, John G. Pasko, James D. Garnett, Donald E. Cooper, John T. Montroy, Majid Zandian, Michael Carmody, Roger E. DeWames, Donald N. B. Hall, Jose Arias, J. Chow
Publikováno v:
Scientific Detectors for Astronomy ISBN: 9781402017889
Low background applications place the most stringent requirements on detector material, requiring the lowest possible dark currents, highest quantum efficiencies, negligible image persistence (image latency or “ghosts”), high operability, and goo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9210e6baaffabc288bcfaf8854f15b
https://doi.org/10.1007/1-4020-2527-0_8
https://doi.org/10.1007/1-4020-2527-0_8
Publikováno v:
SPIE Proceedings.
We report significant improvements in the performance of short wavelength infrared 128 X 128 focal plane arrays at room temperature. Using InGaAs and HgCdTe detector materials coupled to readout multiplexers having gate modulated detector interface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df40baf60c61e8dab6cc436e7bd0fd4
https://doi.org/10.1117/12.243052
https://doi.org/10.1117/12.243052
Publikováno v:
SPIE Proceedings.
Bajaj, Jose Arias, Majid Zandian, and John PaskoScience Center Rockwell International Corporation1049 Camino Dos Rios, Thousand Oaks, California 91358ABSTRACTDeep-level transient spectroscopy (DLTS) measurements were performed on midwavelength HgCdTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2f6514b74b7f6566aae882b781705b
https://doi.org/10.1117/12.189247
https://doi.org/10.1117/12.189247
Autor:
John G. Pasko, Jose M. Arias, Roger E. DeWames, Lester J. Kozlowski, Jagmohan Bajaj, Majid Zandian, W. E. Tennant
Publikováno v:
SPIE Proceedings.
Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feca7993c40607ac688f34052b6aec3e
https://doi.org/10.1117/12.189243
https://doi.org/10.1117/12.189243
Publikováno v:
SPIE Proceedings.
Deep levels in p+n Hg0.73Cd0.27Te/Hg0.68Cd0.32Te planar heterostructure diodes, grown by molecular beam epitaxy on CdZnTe wafers, were studied using deep level transient spectroscopy (DLTS). The DLTS spectra showed the presence of at least two hole t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5991a69efea763e3fc319949189d2942
https://doi.org/10.1117/12.179700
https://doi.org/10.1117/12.179700