Zobrazeno 1 - 10
of 19
pro vyhledávání: '"John G. Maltabes"'
Autor:
Yuko Sakai, Joseph Perez, Akjko Fujii, Ecron Thompson, Kosta Selinidis, John G. Maltabes, Douglas J. Resnick, Sidlgata V. Sreenivasan, Gerard M. Schmid, Shiho Sasaki, Naoya Hayashi, Nick Stacey
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2410-2415
Imprint lithography has been included on the ITRS lithography roadmap at the 32, 22, and 16nm nodes. Step and flash imprint lithography (S-FIL®) is a unique method that has been designed from the beginning to enable precise overlay for creating mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e83a24c1c39c6e560d452d877d2d04d
https://doi.org/10.1116/1.2976573
https://doi.org/10.1116/1.2976573
Autor:
R. Scott Mackay, John G. Maltabes
Publikováno v:
Microelectronic Engineering. 83:933-935
Imprint lithography has been proposed as a low cost method for next generation lithography for the manufacturing of semiconductors for the 45nm node and below, as costs for traditional optical lithography and EUV lithography escalate to new levels th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce6d4cd5c608897b017469e6fbb010f
https://doi.org/10.1016/j.mee.2006.01.256
https://doi.org/10.1016/j.mee.2006.01.256
Autor:
W. Martin, Joseph Perez, John G. Maltabes, D. J. Resnick, K. Selenidis, I. McMackin, Sidlgata V. Sreenivasan
Publikováno v:
SPIE Proceedings.
Imprint lithography has been shown to be an effective method for the replication of nanometer-scale structures from a template mold. Step and Flash Imprint Lithography (S-FIL ® ) is unique in its ability to address both resolution and alignment. Rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::254841851e6f3753add08c3fe0e2a1ed
https://doi.org/10.1117/12.747565
https://doi.org/10.1117/12.747565
Autor:
Brian Fletcher, Sidlgata V. Sreenivasan, Scott C. Johnson, John G. Maltabes, I. McMackin, Joseph Perez, Kosta Selinidis, Frank Y. Xu, D. J. Resnick
Publikováno v:
SPIE Proceedings.
Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af395916ca69803aa796858d7910014b
https://doi.org/10.1117/12.720673
https://doi.org/10.1117/12.720673
Autor:
H. Marchman, Rand Cottle, S. Hadisutjipto, John G. Maltabes, Scott Mackay, J. Brown, D. Taylor
Publikováno v:
SPIE Proceedings.
The efficacy of currently available repair techniques has been assessed for a wide variety of defect types encountered on advanced lithographic masks. Focused ion beam (FIB) with gas-assisted etching and deposition, electron beam induced chemical pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5980d057027fc933b9b69e8655e15de8
https://doi.org/10.1117/12.681862
https://doi.org/10.1117/12.681862
Publikováno v:
SPIE Proceedings.
The improvement in effective resolution of photo masks and templates is demonstrated by reducing pattern collapse through the use of surface conditioners. The masks were coated with a chemically amplified negative e-beam resist, FEN270, and exposed o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1dc23ed9430772e7a5c9f9c9a611ba5
https://doi.org/10.1117/12.657620
https://doi.org/10.1117/12.657620
Publikováno v:
SPIE Proceedings.
Recent interest and inclusion to the ITRS roadmap for the investigation of NIL (Nano Imprint Lithography) has brought back to life 1X mask making. Not only does NIL require 1X pattering, it also requires physical contact with the patterning media, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bebc8d0fd455df553ac1052ff8ae8db
https://doi.org/10.1117/12.655887
https://doi.org/10.1117/12.655887
Publikováno v:
SPIE Proceedings.
Imprint lithography has been proposed as a low cost method for next generation lithography for the manufacturing of semiconductors for the 45nm node and below, as costs for traditional optical lithography, and EUV lithography escalate to new levels t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95440a097788a795e89339240b9eda8
https://doi.org/10.1117/12.632207
https://doi.org/10.1117/12.632207
Publikováno v:
SPIE Proceedings.
Imprint lithography has been proposed as a low cost method for next generation lithography for the manufacturing of semiconductors for the 45nm node and below, as costs for traditional optical lithography, and EUV lithography escalate to new levels t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4695b4a739eb07f5a0eba6f21e0c99f8
https://doi.org/10.1117/12.629499
https://doi.org/10.1117/12.629499
Publikováno v:
SPIE Proceedings.
This paper describes a high-leverage cost-reduction methodology -- advanced mix-and-match lithography. Quantifying the areas of cost savings and cost of ownership is essential in determining the optimum mix-and-match approach. Cost of ownership, usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f4c70c26ec50898f8694af4bb05356
https://doi.org/10.1117/12.150478
https://doi.org/10.1117/12.150478