Zobrazeno 1 - 8
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pro vyhledávání: '"John F. Moulder"'
Publikováno v:
Microscopy and Microanalysis. 21:1183-1184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc88d5c9c752e54850c69513365c1abf
https://doi.org/10.1017/s1431927615006704
https://doi.org/10.1017/s1431927615006704
Publikováno v:
Analytical chemistry. 65(10)
Static secondary ion mass spectrometry (SIMS) was used to analyze proteins adsorbed to biomaterial surfaces. A spectral interpretation protocol was established by examining homopolymers of 16 amino acids. This protocol allows for the assignment of pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5049012256d59e67284c2803c13593f
https://pubmed.ncbi.nlm.nih.gov/8517550
https://pubmed.ncbi.nlm.nih.gov/8517550
Publikováno v:
Journal of Adhesion Science and Technology. 2:11-19
X-ray photoelectron spectroscopy (XPS), also known as ESCA, was used for the studies of aluminum and steel panels treated with di(dioctyl)pyrophosphate ethylene titanate (a titanate coupling agent commercially known as KR 238S). The bonding of the ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe169a4b18d6e4901da3247912d8e72
https://doi.org/10.1163/156856188x00020
https://doi.org/10.1163/156856188x00020
Autor:
John F. Moulder, A. Joshi
Publikováno v:
Metallurgical Transactions A. 12:1140-1143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6d6b7434ce1e955d9344fdc338fb9d
https://doi.org/10.1007/bf02643499
https://doi.org/10.1007/bf02643499
Autor:
Ronald S. Nowicki, John F. Moulder
Publikováno v:
Journal of The Electrochemical Society. 128:562-567
We report a preliminary study in which the physical and electrical properties of d‐c magnetron and co‐deposited rf diode molybdenum silicide films of varying stoichiometry are compared. It is shown that the d‐c magnetron films deposited from a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091ce8baff33e3d2ccf10780a314a3ad
https://doi.org/10.1149/1.2127458
https://doi.org/10.1149/1.2127458
Publikováno v:
Applied Physics Letters. 41:1127-1129
Thermal oxidation of TaSi2 in dry oxygen and steam has been investigated. 0.3‐μm‐thick films of tantalum silicide were deposited by cosputtering on high resistivity 〈111〉 silicon and oxidized silicon wafers. After a crystallization anneal in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::391cbf60560ddd2f3f9e470b83339cdb
https://doi.org/10.1063/1.93424
https://doi.org/10.1063/1.93424
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