Zobrazeno 1 - 7
of 7
pro vyhledávání: '"John F. Hazell"'
Autor:
Eric Zbinden, Catherine M. Eichhorn, Aaron M. Baumer, William J. Kozlovsky, David Langsam, Jean-Marc Verdiell, John F. Hazell, Alexander J. Wroten, Joshua R. Cornelius
Publikováno v:
2016 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP).
Optical fiber has several benefits over copper cabling including reduced weight, immunity from electromagnetic interference, and increased bandwidth. However, difficulties in operating over temperature have impeded the use of vertical cavity surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d51ae36e68f8b5d610baac0769c3084
https://doi.org/10.1109/avfop.2016.7789901
https://doi.org/10.1109/avfop.2016.7789901
Autor:
B.J. Robinson, Irwin Sproule, D.A. Thompson, John F. Hazell, M. Y. Lai, A. S. W. Lee, B. C. Foo, Jianrong Dong, Soo Jin Chua, Jinghua Teng
Publikováno v:
Journal of Applied Physics. 92:4330-4335
We report the technique of controlled group V quantum well intermixing (QWI) in a compressively strained In0.76Ga0.24As0.85P0.15/In0.76Ga0.24As0.52P0.48 multiquantum well laser structure and its application to the fabrication of two-section tunable l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491e60f981453f25c9855986ac9be628
https://doi.org/10.1063/1.1508428
https://doi.org/10.1063/1.1508428
Autor:
Irwin Sproule, B.J. Robinson, Jinghua Teng, Jianrong Dong, John F. Hazell, Soo Jin Chua, A. S. W. Lee, David A. Thompson
Publikováno v:
Materials Science in Semiconductor Processing. 4:621-624
We report on controlled band gap modification in a compressively strained InGaAsP multi-quantum well-laser structure using different encapsulating layers followed by rapid thermal processing (RTP). The structure used was designed as a 1.55 μm laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c40ef56999d06192ee15a7812ee6f970
https://doi.org/10.1016/s1369-8001(02)00030-6
https://doi.org/10.1016/s1369-8001(02)00030-6
Publikováno v:
Semiconductor Science and Technology. 16:986-991
The enhancement of quantum-well intermixing by SiOxNy and commercial spin-on glass dielectric films deposited on InP-based practical laser structures with all-quaternary active regions has been studied. Migration of semiconductor atoms into the diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bffd55c82230ca214ebc6ade7981be84
https://doi.org/10.1088/0268-1242/16/12/307
https://doi.org/10.1088/0268-1242/16/12/307
Publikováno v:
Tuning the Optical Response of Photonic Bandgap Structures II.
Aegis Semiconductor is developing a diverse family of tunable thin film filters based on the thermo-optic properties of amorphous semiconductors. As thin film Fabry-Perot or multiple cavity filters, these devices have the fundamental structure of tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00dee551eaa12838724b052dcebcc25b
https://doi.org/10.1117/12.609871
https://doi.org/10.1117/12.609871
Autor:
Tao Yin, David A. Thompson, John F. Hazell, N Bertsch, A. S. W. Lee, Gregory J. Letal, B.J. Robinson, John G. Simmons
Publikováno v:
Optoelectronic Materials and Devices II.
New methods of implementing quantum well intermixing (QWI) in InP-based materials using defect-enhanced diffusion are presented and compared to the widely reported technique employing dielectric (usuall SiO 2 ) capping with subsequent rapid thermal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eccea36d6548657cee9de90aaa7bbaae
https://doi.org/10.1117/12.392137
https://doi.org/10.1117/12.392137
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