Zobrazeno 1 - 7
of 7
pro vyhledávání: '"John Ellis Monaghan"'
Autor:
John Ellis Monaghan, Satyasuresh Choppalli, Venkata Narayana Rao Vanukuru, Alvin J. Joseph, Balaji Swaminathan, Anupam Dutta, Mark D. Jaffe, Yue Tan, Randy Wolf, Ron Logan
Publikováno v:
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
In this paper, significant improvement in cascode LNA performance is demonstrated by using a new high self gain (HSG) common gate (CG) transistor. Emphasis has been on making the output conductance $g_{ds}$ lower and flatter with drain bias. A protot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a7f71cc69a492136c03162ba30966b
https://doi.org/10.1109/sirf46766.2020.9040175
https://doi.org/10.1109/sirf46766.2020.9040175
Publikováno v:
Circuits at the Nanoscale ISBN: 9781315218762
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16a45c67cf13bac3881c470b47832f7f
https://doi.org/10.1201/9781315218762-24
https://doi.org/10.1201/9781315218762-24
Autor:
Qizhi Liu, Bjorn Zetterlund, John Ellis Monaghan, Nelson E. Lourenco, Kurt A. Moen, John J. Pekarik, John D. Cressler, Aaron L. Vallett, S.D. Phillips, James W. Adkisson, Renata Camillo-Castillo, Troy D. England, Peter B. Gray, Marwan H. Khater, V. Kaushal, David L. Harame, Vibhor Jain, Peng Cheng, Robert L. Schmid
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory at the University of Califor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f13f4faf50c9172d9ddc36c62959a06
https://doi.org/10.1109/redw.2012.6353734
https://doi.org/10.1109/redw.2012.6353734
Autor:
Rick Phelps, Donald J. Cook, Helmut Nauschnig, Santosh Sharma, Georg Roerher, Alain Loiseau, Rainer Minixhofer, Theodore J. Letavic, Yun Shi, John-Ellis Monaghan, James S. Dunn, Natalie B. Feilchenfeld, Christopher Lamothe
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
This paper presents a 20V-rated planar dual gate oxide NLDMOS power device structure fabricated in a 180nm power management technology. The performance of the planar dual gate device structure is compared to a conventional STI-based device and it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e20dcf055204e8d650f75d8097771
https://doi.org/10.1109/ispsd.2012.6229107
https://doi.org/10.1109/ispsd.2012.6229107
Autor:
P. Razina, R. Preston, Brian M. Czabaj, N. Lai, D. Demuynck, Tom C. Lee, Mark D. Jaffe, Rajendran Krishnasamy, James W. Adkisson, Charles F. Musante, C. Walsh, John Ellis-Monaghan, A. Watts, B. Leidy, Richard J. Rassel, J. Gambino
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07b38ef5a4dfb06a67bbb8a9f689466
https://doi.org/10.7567/ssdm.2009.d-1-5
https://doi.org/10.7567/ssdm.2009.d-1-5
Autor:
B. Guthrie, James W. Adkisson, S. Mongeon, Charles F. Musante, Richard J. Rassel, Mark D. Jaffe, K. Ackerson, B. Leidy, John Ellis-Monaghan, J. Gambino, Wagdi W. Abadeer, D. Meatyard
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010186379d6b87a8d9abc323a8920e99
https://doi.org/10.7567/ssdm.2008.c-8-4
https://doi.org/10.7567/ssdm.2008.c-8-4
Autor:
J. Gambino, Charles F. Musante, K. Ackerson, John Ellis-Monaghan, Daniel N. Maynard, Mark D. Jaffe, Kevin N. Ogg, Richard J. Rassel
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
CMOS image sensors have increasingly replaced the use of charge coupled devices (CCD) in consumer devices because of lower power consumption, lower system cost, and the ability to randomly access data. However, one disadvantage of CMOS image sensors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8613aaf1b64bf6f357b4bf0b7f53434a
https://doi.org/10.1109/asmc.2008.4529048
https://doi.org/10.1109/asmc.2008.4529048