Zobrazeno 1 - 10
of 23
pro vyhledávání: '"John E. Scheihing"'
Publikováno v:
Crystals, Vol 6, Iss 11, p 150 (2016)
Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a result, the l
Externí odkaz:
https://doaj.org/article/50a364b93cf549469639ad0a763ae9e8
Autor:
Zahra Taghipour, John E. Scheihing, Sanjay Krishna, Ted Schuler-Sandy, Christian P. Morath, Stephen Myers, Vincent M. Cowan, Eli A. Garduno, Alireza Kazemi, Elizabeth H. Steenbergen, Gamini Ariyawansa, Sen Mathews, Seung Hyun Lee
Publikováno v:
Infrared Physics & Technology. 88:114-118
We report a Mid-Wavelength Infrared (MWIR) barrier photodetector based on the InAs/GaSb/AlSb type-II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 µm thick p-doped absorbe
Publikováno v:
Micromachines
Volume 10
Issue 12
Micromachines, Vol 10, Iss 12, p 806 (2019)
Volume 10
Issue 12
Micromachines, Vol 10, Iss 12, p 806 (2019)
This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molec
Publikováno v:
Web of Science
This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvement
Autor:
Vincent M. Cowan, Christian P. Morath, Priyalal S. Wijewarnasuriya, Gamini Ariyawansa, Stephen Myers, Sanjay Krishna, Alireza Kazemi, Sen Mathews, Elizabeth H. Steenbergen, John E. Scheihing, Zahra Taghipour
Publikováno v:
Infrared Sensors, Devices, and Applications VII.
We present a model for the spectral external quantum efficiency (EQE) to extract the minority carrier diffusion length (Ln) of a unipolar nBp InAs/GaSb Type-II superlattice (T2SL) mid-wave infrared (MWIR) detector. The detector consists of a 4 μm th
Autor:
John E. Scheihing, Joshua M. Duran, Narae Yoon, Elizabeth H. Steenbergen, Daniel Wasserman, Gamini Ariyawansa, Charles J. Reyner
Publikováno v:
Infrared Technology and Applications XLIII.
Type-II strained layer superlattices (SLS) are an active research topic in the infrared detector community and applications for SLS detectors continue to grow. SLS detector technology has already reached the commercial market due to improvements in m
Autor:
Joshua M. Duran, Elizabeth H. Steenbergen, Geoffrey D. Jenkins, Christian P. Morath, Vincent M. Cowan, Gamini Ariyawansa, Charles J. Reyner, John E. Scheihing
Publikováno v:
SPIE Proceedings.
The last two decades have seen tremendous progress in the design and performance of mid-wavelength infrared (MWIR) type-II superlattices (T2SL) for detectors. The materials of focus have evolved from the InAs/(In)GaSb T2SL to include InAs/InAsSb T2SL
Autor:
Narae Yoon, John E. Scheihing, Daniel Wasserman, James C. Mabon, Charles J. Reyner, Gamini Ariyawansa
Publikováno v:
Conference on Lasers and Electro-Optics.
We present the temperature dependent minority carrier mobility of Ga-content varying InGaAs/InAsSb superlattice infrared detectors by combining time-resolved photoluminescence and electron beam induced current measurements with a new numerical approa
Publikováno v:
Crystals, Vol 6, Iss 11, p 150 (2016)
Crystals; Volume 6; Issue 11; Pages: 150
Crystals; Volume 6; Issue 11; Pages: 150
Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a result, the l
Publikováno v:
2016 IEEE Photonics Conference (IPC).
We present the temperature-dependent characterization of minority carrier diffusion length, minority carrier lifetime, diffusivity, surface recombination velocity and mobility on In(Ga)As/InAsSb type-II superlattices by using electron beam induced cu