Zobrazeno 1 - 10
of 13
pro vyhledávání: '"John E. Gozum"'
Publikováno v:
Inorganic Chemistry. 62:4106-4115
Publikováno v:
Journal of Organometallic Chemistry. 695:2804-2808
Addition of tertiary phosphines to Th(BH4)4(Et2O)2 yields the new Lewis base adducts, Th(BH4)4(PMe3)2, Th(BH4)4(PEt3)2, and Th(BH4)4(dmpe)2, where dmpe = 1,2-bis(dimethylphosphino)ethane. If one considers the BH 4 − groups to occupy one coordinatio
Publikováno v:
Chemistry of Materials. 9:1847-1853
The deposition of MoS2 and TiS2 thin films from the metal-organic precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 has been investigated. Stoichiometric films with low levels of oxygen and carbon contaminants can be grown at temperatures between 110 and 350 °
Publikováno v:
Journal of the American Chemical Society. 114:9483-9492
Prolonged treatment of the tetrakis (tetrahydroborate) complexes Zr(BH{sub 4}{sub 4}) or Hf(BH{sub 4}){sub 4} with trimethylphosphine has given the first trinuclear group 4 polyhydrides, M{sub 3}H{sub 6}(BH{sub 4}){sub 6}(PMe{sub 3}){sub 4}, where M
Autor:
John E. Gozum, Gregory S. Girolami
Publikováno v:
Journal of the American Chemical Society. 113:3829-3837
Publikováno v:
Organometallics. 6:1311-1317
La reaction de Ru 3 (NA r )(CO) 10 avec les azoarenes sans CO resulte en une rupture de la double liaison N−N donnant Ru 3 (NA r ) 2 (CO) 9 et ArNCO. Structure cristalline de HRu 3 (NPh)L(CO) 8 avec L=CH 3 OC 6 H 3 NNC 6 H 4 OCH 3
Publikováno v:
MRS Proceedings. 121
We have been investigating the use of “tailored” organo-metallic precursors for the chemical vapor deposition (CVD) of thin films in an effort to open up new approaches to the low-temperature synthesis of ceramic, electronic, and optical material
Publikováno v:
ChemInform. 19
Publikováno v:
ChemInform. 19
The fabrication of electronic devices by chemical vapor deposition is a rapidly expanding area of great current interest. Metal-organic chemical vapor deposition (MOCVD) routes to the preparation of semiconductor thin films, such as GaAs from GaMe/su
Autor:
Gregory S. Girolami, John E. Gozum
Publikováno v:
MRS Proceedings. 168
A review is presented of early and recent advances in the metal-organic chemical vapor deposition (MOCVD) of thin films from organotransition metal and related precursors. Routes to pure metals and alloys, metal carbides, metal borides, metal nitride