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pro vyhledávání: '"John E. Davison"'
Autor:
Keith A. Benton, Isabella T. Lewis, Somit Talwar, K.‐Josef Kramer, John E. Davison, Kenneth Williams, Kurt H. Weiner
Publikováno v:
Applied Physics Letters. 68:2320-2322
The selective fabrication of ultrashallow p+/n junctions in silicon using projection gas immersion laser doping is reported. The method offers substantial improvement and simplification in junction formation to integrated circuit manufacturers, since
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73edca903a3cbd341c96937a70281c79
https://doi.org/10.1063/1.115844
https://doi.org/10.1063/1.115844
