Zobrazeno 1 - 10
of 66
pro vyhledávání: '"John E Mahan"'
Autor:
John E. Mahan
Publikováno v:
Thin Solid Films. 461:152-159
Every published study of higher manganese silicide (HMS) that has been concerned with its electronic band structure has affirmed its semiconducting nature. The results fall into two main camps: (1) it has a direct bandgap near 0.7 eV, or (2) it has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8a640c839d4b00a09e0d6af9e7b818
https://doi.org/10.1016/j.tsf.2004.02.090
https://doi.org/10.1016/j.tsf.2004.02.090
Autor:
André Vantomme, John E. Mahan
Publikováno v:
Physical Review B. 61:8516-8525
Knowing the fundamental trends of sputter yield in the sputtering regime used for film deposition is crucial for understanding the mechanisms of sputter deposition, interpreting yield data, and predicting the results of experiments. One source of exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b56bac0e1fb47cc935e1d459a6b7387
https://doi.org/10.1103/physrevb.61.8516
https://doi.org/10.1103/physrevb.61.8516
Publikováno v:
IEEE Transactions on Education. 43:36-42
The authors have recently added a strong writing component to one of their freshman courses in electrical engineering. The students prepared two kinds of reports-memoranda and formal engineering project reports. The authors' instructional objectives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0955357db3ed769160d1a12d634bd9fa
https://doi.org/10.1109/13.825738
https://doi.org/10.1109/13.825738
Publikováno v:
Microelectronic Engineering. 50:237-242
Reactive deposition of magnesium onto a hot silicon substrate (200–500°C) does not result in any accumulation of magnesium or its silicide — the condensation coefficient of magnesium being zero. On the other hand, co deposition of magnesium with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8828b40aa57a8de258f422cffaa22a7d
https://doi.org/10.1016/s0167-9317(99)00287-7
https://doi.org/10.1016/s0167-9317(99)00287-7
Autor:
John E. Mahan, André Vantomme
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1976-1989
Thin film deposition by sputtering is usually performed with projectile-energy-target combinations placing the sputtering mechanism within the linear cascade regime of collisional sputtering. For the purposes of estimating sputter yield values, as we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e736e3cd3d2c093a521c4aa1f5a889
https://doi.org/10.1116/1.580668
https://doi.org/10.1116/1.580668
Publikováno v:
Journal of Applied Physics. 81:7289-7294
yield (;30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt. The initial film deposits are epitaxial islands, and subsequent growth is in the Frank‐van der Merwe mode. With the islands already relaxed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc515f1369f8a282812615b94bc80587
https://doi.org/10.1063/1.365326
https://doi.org/10.1063/1.365326
Publikováno v:
Physical Review B. 54:16965-16971
${\mathrm{Mg}}_{2}$Si is a semiconductor with a band gap previously reported to be in the range 0.6--0.8 eV. In spite of potential optoelectronic applications in an important infrared range, the growth of ${\mathrm{Mg}}_{2}$Si thin films on silicon s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dbc97eb5102e822e18dedfc82efbbb9
https://doi.org/10.1103/physrevb.54.16965
https://doi.org/10.1103/physrevb.54.16965
Publikováno v:
Journal of Applied Physics. 77:3088-3094
Vacuum evaporation techniques were applied to the epitaxial growth of CrSi2 on Si(111) substrates. There are two CrSi2 matching faces which offer good lattice matchings, and which are observed experimentally: the (001) and the (111). These are presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff8ea6d89936dd745b48c3d58e28181
https://doi.org/10.1063/1.359539
https://doi.org/10.1063/1.359539
Publikováno v:
Journal of Applied Physics. 75:3924-3927
Reactive deposition epitaxy was used to synthesize thin layers of RexMo1−xSi2 on Si(100). In the case of x=1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xingh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9494084982292e6912b3a700ccf31ddf
https://doi.org/10.1063/1.356038
https://doi.org/10.1063/1.356038
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:174-178
Carbon contamination of silicon surfaces is a longstanding concern for growers of thin films who utilize silicon wafer substrates. This contamination often takes the form of epitaxial β‐SiC particles which grow after the decomposition of adsorbed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c16c393745655bbe2e59439b7b4ebd
https://doi.org/10.1116/1.578916
https://doi.org/10.1116/1.578916