Zobrazeno 1 - 4
of 4
pro vyhledávání: '"John D. Femi-Oyetoro"'
Autor:
Arup Neogi, Ibikunle Ojo, Jingbiao Cui, Mihir Khare, Yan Jiang, Brian Squires, Evan Hathaway, Steven Yao, Usha Philipose, Dave Banerjee, Kevin Yao, John D. Femi-Oyetoro, Daniel C. Jones, Jose M. Perez, Gage Marshall, Aryan Agarwal, Ernest Lu
Publikováno v:
MRS Advances. 5:2707-2715
Monolayer (ML) molybdenum disulfide (MoS2) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS2 is limited in its use due to its degradation under exposure to ambient air. Ther
Autor:
John D. Femi-Oyetoro, Nithish Kumar Gadiyaram, Yan Jiang, Ibikunle Ojo, Evan Hathaway, Jingbiao Cui, Brian Squires, Weidong Zhou, Usha Philipose, Jose M. Perez, Arup Neogi, Kevin Yao
Publikováno v:
Advanced Materials Interfaces. 8:2101188
Autor:
Steven Yao, Lidia El Bouanani, Usha Philipose, Daniel C. Jones, Yan Jiang, Jose M. Perez, Mohamed El Bouanani, Bibhudutta Rout, John D. Femi-Oyetoro, Kevin Yao, Arup Neogi, P.A. Ecton
Publikováno v:
2D Materials. 7:015024
Autor:
Ashley Mhlanga, John D. Femi-Oyetoro, Duncan L. Weathers, Jose M. Perez, Guido F. Verbeck, P.A. Ecton, Kevin M. Roccapriore, Kevin Yao, Runtian Tang
Publikováno v:
Journal of Vacuum Science & Technology A. 37:021401
The authors investigate the mechanism for etching of exfoliated graphene multilayers on SiO2 by low-energy (50 eV) electron irradiation using He plasma systems for electron sources. A mechanism for this etching has been previously proposed in which t