Zobrazeno 1 - 10
of 63
pro vyhledávání: '"John D. Burton"'
Autor:
John D. Burton
Publikováno v:
The Family in Past Perspective ISBN: 9780429355912
Historians have struggled to describe and interpret slave family life for decades. Although the creation of family structures is central to the human experience, slavery legally erased their existence, hiding them from much of the historical record.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfabb6ad91bef8925fe0ceb4baf70a8e
https://doi.org/10.4324/9780429355912-2
https://doi.org/10.4324/9780429355912-2
Autor:
John D. Burton
Publikováno v:
History of Higher Education Annual ISBN: 9780429337598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06774bb8d502b8fb9c0413fbec36312
https://doi.org/10.4324/9780429337598-2
https://doi.org/10.4324/9780429337598-2
Autor:
John D. Burton, Jane Eva Baxter
Publikováno v:
Childhood in the Past. 11:3-7
This article offers an introduction to a special journal issue on nineteenth-century education. The three papers that comprise the issue are geographically and topically diverse, but all pr...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5708fd1bbd8742abaa2041fb9a46c924
https://doi.org/10.1080/17585716.2018.1447235
https://doi.org/10.1080/17585716.2018.1447235
Publikováno v:
Physical Review B. 98
Using density-functional theory calculations, we investigate the dominant defects formed by boron (B) and carbon (C) impurities in a CoFe/MgO/CoFe magnetic tunnel junction (MTJ) and their influence on conductivity and tunneling magnetoresistance (TMR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7aa030f57052461af38c3c6995bd5fa
https://doi.org/10.1103/physrevb.98.045129
https://doi.org/10.1103/physrevb.98.045129
Autor:
John D. Burton, Gustau Catalan, Ariando, Alexei Gruverman, Sangwoo Ryu, Pankaj Sharma, Tula R. Paudel, Chang-Beom Eom, Chung Wung Bark, Evgeny Y. Tsymbal, Zhiwei Huang
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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Sharma, P. et al.
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities fo
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eda93192f378d96518ad492b34a9de91
https://doi.org/10.1021/acs.nanolett.5b01021
https://doi.org/10.1021/acs.nanolett.5b01021
Autor:
John D. Burton, Evgeny Y. Tsymbal
This article examines magnetoresistive phenomena in nano- and atomic-size ferromagnetic metal contacts. In particular, it considers how magnetization affects the flow of electrical current in ferromagnetic materials by focusing on two major categorie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96146cb1906061f043cb3606086cc2d0
https://doi.org/10.1093/oxfordhb/9780199533046.013.18
https://doi.org/10.1093/oxfordhb/9780199533046.013.18
Autor:
Sang Mo Yang, John D. Burton, Alexei Gruverman, Albina Y. Borisevich, Evgeny Y. Tsymbal, Yuewei Yin, Tae Won Noh, S. J. Pennycook, Y-M. Kim, Xiaoguang Li, Qi Li
Publikováno v:
Nature Materials. 12:397-402
The range of recently discovered phenomena in complex oxide heterostructures, made possible owing to advances in fabrication techniques, promise new functionalities and device concepts. One issue that has received attention is the bistable electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::671bf6d7ac42d35e1b7e7884b4e809ae
https://doi.org/10.1038/nmat3564
https://doi.org/10.1038/nmat3564
Publikováno v:
npj Computational Materials. 2
Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::432ca21de46c12c00da3e3458bfe1db0
https://doi.org/10.1038/npjcompumats.2016.9
https://doi.org/10.1038/npjcompumats.2016.9
Publikováno v:
Physical Review Letters. 116
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814f1582e12d16f191e91350a502841c
https://doi.org/10.1103/physrevlett.116.209902
https://doi.org/10.1103/physrevlett.116.209902
Autor:
Evgeny Y. Tsymbal, A. Solmaz, Guus Rijnders, Tamalika Banerjee, John D. Burton, Susanta Sinha Roy, Mark Huijben
Publikováno v:
Physical Review B, 93(11):115101. AMER PHYSICAL SOC
Physical review B: Condensed matter and materials physics, 93:115101. American Physical Society
Physical review B: Condensed matter and materials physics, 93:115101. American Physical Society
Atomically engineered oxide heterointerfaces show a range of novel phenomena not present in their bulk form, thus providing an additional knob to tune the functional properties across such interfaces. Here we show that for an oxide Schottky interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::603c6055fc531b14cb870c673d336792
https://doi.org/10.1103/PhysRevB.93.115101
https://doi.org/10.1103/PhysRevB.93.115101