Zobrazeno 1 - 10
of 178
pro vyhledávání: '"John D Murphy"'
Autor:
James C Blakesley, Ruy S Bonilla, Marina Freitag, Alex M Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D Major, Jenny Nelson, Nakita K Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A Boden, Hugo Bronstein, Matthew J Carnie, Chris Case, Fernando A Castro, Yi-Ming Chang, Elmer Chao, Tracey M Clarke, Graeme Cooke, Pablo Docampo, Ken Durose, James R Durrant, Marina R Filip, Richard H Friend, Jarvist M Frost, Elizabeth A Gibson, Alexander J Gillett, Pooja Goddard, Severin N Habisreutinger, Martin Heeney, Arthur D Hendsbee, Louise C Hirst, M Saiful Islam, K D G Imalka Jayawardena, Michael B Johnston, Matthias Kauer, Jeff Kettle, Ji-Seon Kim, Dan Lamb, David Lidzey, Jihoo Lim, Roderick MacKenzie, Nigel Mason, Iain McCulloch, Keith P McKenna, Sebastian B Meier, Paul Meredith, Graham Morse, John D Murphy, Chris Nicklin, Paloma Ortega-Arriaga, Thomas Osterberg, Jay B Patel, Anthony Peaker, Moritz Riede, Martyn Rush, James W Ryan, David O Scanlon, Peter J Skabara, Franky So, Henry J Snaith, Ludmilla Steier, Jarla Thiesbrummel, Alessandro Troisi, Craig Underwood, Karsten Walzer, Trystan Watson, J Michael Walls, Aron Walsh, Lucy D Whalley, Benedict Winchester, Samuel D Stranks, Robert L Z Hoye
Publikováno v:
JPhys Energy, Vol 6, Iss 4, p 041501 (2024)
Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfill ambitions for net-zero carbon dioxide equivalen
Externí odkaz:
https://doaj.org/article/621196ac30394ef8b9470f767032dee3
Publikováno v:
Materials Research Express, Vol 11, Iss 1, p 015002 (2024)
Monolayer molybdenum disulfide (MoS _2 ) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an important meth
Externí odkaz:
https://doaj.org/article/4d7a690ef15b4cc2b072b91da1a0ce98
Autor:
Arne Benjamin Benjamin Renz, Oliver J Vavasour, Peter Michael Gammon, Fan Li, Tianxiang Dai, Guy W C Baker, Nicholas E Grant, John D Murphy, P. A. Mawby, Vishal Ajit Shah, James Gott
Publikováno v:
ECS Transactions. 108:43-49
A major component of reliability of Silicon Carbide (4H-SiC) power electronics are due to the gate dielectric. Specific aspects such as hysteresis, insulator lifetime, threshold voltage (VTH) instability and high leakage currents, remain an issue of
Autor:
John D. Murphy, Andrew F. Olshan, Feng-Chang Lin, Melissa A. Troester, Hazel B. Nichols, Julia Butt, You-Lin Qiao, Christian C. Abnet, Manami Inoue, Shoichiro Tsugane, Meira Epplein
Publikováno v:
Cancer Epidemiol Biomarkers Prev
Background: Blood-based biomarkers for gastric cancer risk stratification could facilitate targeting screening to people who will benefit from it most. The ABC Method, which stratifies individuals by their Helicobacter pylori infection and serum-diag
Autor:
Shona McNab, Xinya Niu, Edris Khorani, Ailish Wratten, Audrey Morisset, Nicholas E. Grant, John D. Murphy, Pietro P. Altermatt, Matthew Wright, Peter R. Wilshaw, Ruy S. Bonilla
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87b91c611e210c0ddaaf771153f8c26f
https://ora.ox.ac.uk/objects/uuid:be849e6c-9ccc-4de2-83d3-5ef4b99b0ea0
https://ora.ox.ac.uk/objects/uuid:be849e6c-9ccc-4de2-83d3-5ef4b99b0ea0
Autor:
Ailish Wratten, Sophie L. Pain, David Walker, Arne Benjamin Renz, Edris Khorani, Tim Niewelt, Nicholas E. Grant, John D. Murphy
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO 2 ) thin films grown via atomic layer deposition (ALD). Plasma-enhanced ALD with O 2 plasma and a tetrakis(dimethylamido)hafnium precursor wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10474ee8b7ba8fe0f1726cc6555f3c85
Autor:
Han Xia, Stephen R. Groskreutz, Michael O. Frederick, Michael E. Kopach, Nessa Mullane, Jeffrey T. Lampert, Kevin D. Seibert, Mark A. Strege, Neil J. Kallman, Bradley M. Campbell, Sergey V. Tsukanov, Frank L. Torres Torres, Ashley A. Humenik, Gordon R. Lambertus, Nil Tandogan, Nicholas D. Klitzing, Carmel Condon, Shujauddin M. Changi, Joel R. Calvin, Jennifer McClary Groh, Timothy M. Braden, Marie E. O’Mahony, Juliana Kretsinger, Rachel N. Richey, Stephanie R. Coffin, Laura M. Maguire, Richard D. Spencer, Raymond A. Boyse, Zachary D. Harms, John D. Murphy, Humphrey A. Moynihan, Olivia Gowran
Publikováno v:
Organic Process Research & Development. 25:1628-1636
Autor:
Edward Butler-Caddle, Igor Khrushchev, Sophie L. Pain, Nicholas E. Grant, John D. Murphy, James Lloyd-Hughes
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Autor:
Joyce Ann T. De Guzman, Vladimir P. Markevich, Jack Mullins, Nicholas Grant, John D. Murphy, Daniel Hiller, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
De Guzman, J A T, Markevich, V P, Mullins, J, Grant, N, Murphy, J D, Hiller, D, Halsall, M P & Peaker, A R 2022, Formation and Elimination of Electrically Active Thermally-Induced Defects in Float-Zone-Grown Silicon Crystals . in R Brendel, C Ballif, S Dubois, S Glunz, G Hahn, J Poortmans, P Verlinden & A Weeber (eds), SiliconPV 2021-11th International Conference on Crystalline Silicon Photovoltaics ., 130003, AIP Conference Proceedings, vol. 2487, American Institute of Physics, 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021, Hamelin, Virtual, Germany, 19/04/21 . https://doi.org/10.1063/5.0089287
Understanding the origins of the phenomena that limit the minority carrier lifetime in float-zone-grown silicon (FZ-Si) is an important area in photovoltaics research. Although FZ silicon has been applauded for its stability, purity, and high minorit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af468bc77b45dcd9a86f6e66ce93853
http://wrap.warwick.ac.uk/158723/1/WRAP-formation-elimination-electrically-active-thermally-induced-defects-float-zone-grown-silicon-crystals-Murphy-2022.pdf
http://wrap.warwick.ac.uk/158723/1/WRAP-formation-elimination-electrically-active-thermally-induced-defects-float-zone-grown-silicon-crystals-Murphy-2022.pdf