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pro vyhledávání: '"John Choma Ming Hsieh"'
Publikováno v:
ISCAS
A novel 9 nW process, voltage, and temperature invariant subthreshold transconductance bias circuit is designed using a 150 nm CMOS process with BSIM3.V3 models. The circuit uses no external components or strong inversion transistors, drastically red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0925e6dca2f7d6cbbd5e0fc43401675
https://doi.org/10.1109/iscas.2017.8050291
https://doi.org/10.1109/iscas.2017.8050291
