Zobrazeno 1 - 10
of 10
pro vyhledávání: '"John Chervinsky"'
Autor:
John Chervinsky
Publikováno v:
Visual Communication Quarterly. 15:272-279
A point of view can be a dangerous luxury when substituted for insight and understanding. —Marshall McLuhan Every subjective phenomenon is essentially connected with a single point of view, and it ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84a1f6f1bda9e5c242f8e20b10a45a2f
https://doi.org/10.1080/15551390802415105
https://doi.org/10.1080/15551390802415105
Publikováno v:
Physical Review B. 55:R700-R703
We have measured the ion-channeling minimum yield ({chi}{sub min}) and angular width ({Psi}{sub 1/2}) for Y, Ba, Cu, and O in 2000 {Angstrom} (001)-oriented films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on MgO. The measurements mapped out a 30 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8220258ae4e71c2f6fec754db13b5c0e
https://doi.org/10.1103/physrevb.55.r700
https://doi.org/10.1103/physrevb.55.r700
Autor:
Michael J. Aziz, Jene Andrew Golovchenko, Oscar D. Dubon, Matthew F. Chisholm, Paul G. Evans, David A. Muller, John Chervinsky, Frans Spaepen
Publikováno v:
Applied Physics Letters. 78:1505-1507
In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3faed31d508cbb6080d3a64c2e29c500
https://doi.org/10.1063/1.1352692
https://doi.org/10.1063/1.1352692
Publikováno v:
Applied Physics Letters. 73:3120-3122
A monolayer of Pb mediates high-quality homoepitaxial growth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::330d3d56d144cbc98ea9956b9f0a08c9
https://doi.org/10.1063/1.122692
https://doi.org/10.1063/1.122692
Publikováno v:
Applied Physics Letters. 70:2553-2555
Observations of homoepitaxial growth on low-angle miscut (∼0.1°) Si(111) substrates through an overlayer of Au, together with earlier results on highly miscut Si(111) surfaces, indicate that growth in this system occurs by step flow. The growth te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e423b35f545dd4dd3864983ca896d7
https://doi.org/10.1063/1.118918
https://doi.org/10.1063/1.118918
Publikováno v:
Applied Physics Letters. 65:866-868
High quality homoepitaxial growth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547860e8cde90adb65cbee4d21579338
https://doi.org/10.1063/1.112185
https://doi.org/10.1063/1.112185
Autor:
John Chervinsky, Paul G. Evans, Frans Spaepen, Michael J. Aziz, Jene Andrew Golovchenko, O.D. Dubon
Publikováno v:
MRS Proceedings. 570
The codeposition of Pb during Si (111) molecular beam homoepitaxy leads to high-quality crystalline films at temperatures for which films deposited on bare Si (111) are amorphous. Like other growth mediating elements-- commonly called surfactants-- P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a601e6b06681113933f559788be7767
https://doi.org/10.1557/proc-570-45
https://doi.org/10.1557/proc-570-45
Publikováno v:
Han, A, Golovchenko, J A, Chervinsky, J & Branton, D 2012, ' An ice lithography instrument ', Review of Scientific Instruments, vol. 82, no. 6 . https://doi.org/10.1063/1.3601005
We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::354f6be921c54ad0aa49aef811eac8fa
https://doi.org/10.1063/1.3601005
https://doi.org/10.1063/1.3601005
Publikováno v:
Journal of Applied Physics. 100:023535
We have measured the evolving three-dimensional (3D) morphology of patterned SiO2 stripes on Si substrates induced by 3MeV O++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c6df0030eda6d923559190ac632f285
https://doi.org/10.1063/1.2215269
https://doi.org/10.1063/1.2215269
Publikováno v:
Applied Physics Letters. 77:2616-2616
Wei and Su recently published a letter in this journal on low-temperature homoepitaxial growth of silicon mediated by thin overlayers of Pb. A significant portion of the experimental work reported in their letter was performed in our laboratory ~depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3a5d9584c6c33d168084d58a2eea68
https://doi.org/10.1063/1.1318930
https://doi.org/10.1063/1.1318930