Zobrazeno 1 - 10
of 17
pro vyhledávání: '"John Chern"'
Autor:
Alanna Shwed, Femke Hoekstra, DivyaKanwar Bhati, Peter Athanasopoulos, John Chernesky, Kathleen Martin Ginis, Christopher B. McBride, W. Ben Mortenson, Kathryn M. Sibley, Shane N. Sweet, SCI Guiding Principles Panel, Heather L. Gainforth
Publikováno v:
Research Involvement and Engagement, Vol 9, Iss 1, Pp 1-9 (2023)
Abstract Introduction Integrated knowledge translation (IKT) is a partnered approach to research that aims to ensure research findings are applied in practice and policy. IKT can be used during diffusion and dissemination of research findings. Howeve
Externí odkaz:
https://doaj.org/article/f5f225f1f646422fa6b782f8f1de91ea
Autor:
Hannah Prins, Scott Donia, Shannon Rockall, James Hektner, Spring Hawes, James J. Laskin, John Chernesky, Vanessa K. Noonan
Publikováno v:
Healthcare, Vol 12, Iss 7, p 731 (2024)
In British Columbia (BC), there are challenges accessing specialized spinal cord injury care and resources. This paper evaluated the impact of spinal cord injury health educational workshops delivered in regional communities that were informed by per
Externí odkaz:
https://doaj.org/article/49d9e77078b24e40b14ca45394a92721
Publikováno v:
Clinical Case Reports, Vol 11, Iss 4, Pp n/a-n/a (2023)
Abstract Leukocytoclastic vasculitis can be an uncommon and/or underreported adverse event of immune checkpoint inhibitor therapy, an established cancer treatment option. Differentiation among other cutaneous manifestations of adverse medication reac
Externí odkaz:
https://doaj.org/article/7321dc1c9b0b4c58bdd1282c7f68be2e
Autor:
Chwan Ying Lee, Ping Chun Yeh, Hwann-Kaeo Chiou, John Yeh, John Chern, Yi Hung Tsai, Denny Tang
Publikováno v:
Solid-State Electronics. 52:745-748
In this paper, an improved layout and thermal management of eight unit-cells SiGe power HBT with emitter area of 8 × 0.6 × 10 μm 2 were designed for high power density and efficiency performance. The on-wafer power characteristics were measured us
Publikováno v:
IEEE Electron Device Letters. 29:255-258
In this letter, four substrate noise isolation structures in standard 0.18-mum SiGe bipolar CMOS technology were investigated using S-parameter measurements. The experimental and simulated results on different isolation structures, such as triple-wel
Publikováno v:
Japanese Journal of Applied Physics. 46:917-925
The effect of geometry on the RF power performance of silicon–germanium heterojunction bipolar transistor (SiGe HBT) unit cells is investigated using various emitter finger spacing (S). Two unit cells, namely, HBT-1 and HBT-2 with the same emitter
Publikováno v:
2015 8th International Conference on Ubi-Media Computing (UMEDIA).
Currently, people obtained housing information from relatives, friends, sale representatives from model home, Realty networks, or government. It is difficult to get the housing-related information from these resources and hard to compare. Therefore,
Publikováno v:
2015 8th International Conference on Ubi-Media Computing (UMEDIA).
Besides of normal face-to-face learning, learners can use electrical resources to perform digital learning in educational area. Learners can use communication tools such as real-time communication tools, online conferencing tools, and collaborative l
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:20-30
CMOS broad-band compact high-linearity binary phase-shift keying (BPSK) and IQ modulators are proposed and analyzed in this paper. The modulators are constructed utilizing a modified reflection-type topology with the transmission lines implemented on
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:247-249
A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer t