Zobrazeno 1 - 10
of 67
pro vyhledávání: '"John Chelliah"'
Publikováno v:
Nanotechnology Reviews, Vol 6, Iss 6, Pp 613-623 (2017)
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling
Externí odkaz:
https://doaj.org/article/e4f28d792bba4a22ac632f0353dcbd20
Autor:
Doganay, Mert Tunca, John Chelliah, Cyril, Tozluyurt, Abdullah, Hujer, Andrea M., Obaro, Stephen K., Gurkan, Umut, Patel, Robin, Bonomo, Robert A., Draz, Mohamed
Publikováno v:
In Materials Today July-August 2023 67:371-398
Publikováno v:
ECS Transactions. 107:12811-12832
The aim of the project is to simulate and compare current-voltage characteristics in double gate nanowire field effect transistors made of ZnO and SiO2 gate oxides with thicknesses ranging from 1 to 30 nm. Materials and methods: The drain characteris
Publikováno v:
ECS Transactions. 107:14403-14421
The paper presents the design, simulation, and comparison of capacitance-voltage (CV) characteristics for the boron nitride (BN) nanotubes and tungsten disulfide (WS2) nanotubes as gate dielectrics based MOS capacitor. The stack capacitances, flat ba
Publikováno v:
AIP Conference Proceedings.
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:11173-11182
The paper presents the preparation of nanostructured ZnO and TiO2 binary thin films by pulsed laser deposition at different temperatures ranging from 298 K (as deposited) to 923 K. The films have been characterized by SEM, EDAX, XRD, and UV. The pres
Autor:
Natarajan Viswanathan, Cyril Robinson Azariah John Chelliah, Kanagathara Narayanan, Sankar Subramani
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:10778-10788
In this report, a detailed study on dielectric and charge transport properties of the nonlinear optical material—melaminium bis (trichloroacetate) dihydrate (MTCA) is given. It is evident that there is no ferroelectric or antiferroelectric polariza
Publikováno v:
Key Engineering Materials. 853:68-72
The binary metal oxides of ZnO and MoO3 (ZMO) nanostructured thin films were prepared by pulsed laser deposition at different temperatures such as 298(as deposited), 623, 773 and 923K at 10Hz laser repetition rates for 30 min. The films were characte
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7348-7358
The investigations were carried out on binary metal oxide ZnO/V2O5 nanostructured thin films prepared by pulsed laser deposition for the MOSFET channel application. The thin films were prepared at 298 (as deposited), 623, 773, and 923 K at 10 Hz lase
The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::240d4e42305502673c01ddbe26c83c9b
https://doi.org/10.5772/intechopen.96161
https://doi.org/10.5772/intechopen.96161