Zobrazeno 1 - 4
of 4
pro vyhledávání: '"John C. Jarman"'
Autor:
Bogdan F. Spiridon, Peter H. Griffin, John C. Jarman, Yingjun Liu, Tongtong Zhu, Andrea De Luca, Rachel A. Oliver, Florin Udrea
Publikováno v:
Proceedings, Vol 2, Iss 13, p 776 (2018)
This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high
Externí odkaz:
https://doaj.org/article/adef782fba694b49bf15c1f36a043b3c
Autor:
Fabien C.-P. Massabuau, Francesca Adams, David Nicol, John C. Jarman, Martin Frentrup, Joseph W. Roberts, Thomas J. O’Hanlon, Andras Kovács, Paul R. Chalker, R. A. Oliver
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a856508c2358c30ae556580d49c380
https://www.repository.cam.ac.uk/handle/1810/347363
https://www.repository.cam.ac.uk/handle/1810/347363
Autor:
Claudius Kocher, John C. Jarman, Tongtong Zhu, Gunnar Kusch, Rachel A. Oliver, Robert A. Taylor
Publikováno v:
ACS Photonics. 9:275-281
Spectral diffusion can lead to considerable broadening of the line width of nitride quantum dots. Here, InGaN quantum dots grown on a nonpolar plane were shown to exhibit a decreased spectral diffusion rate compared to polar nitride dots. A robust in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab5e3fef95d981f777462b25a0294e4d
https://doi.org/10.1021/acsphotonics.1c01613
https://doi.org/10.1021/acsphotonics.1c01613
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p