Zobrazeno 1 - 10
of 166
pro vyhledávání: '"John C. Bravman"'
Publikováno v:
Thin Solid Films. 476:118-124
The stress-relaxation behavior of 2-μm-thick free-standing thin-film aluminum beams was evaluated by using a piezoelectric-actuated mechanical tester, which subjected them to quasi-static microtensile stress relaxation tests. The microstructure of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01372687529075551186514e640d403
https://doi.org/10.1016/j.tsf.2004.10.001
https://doi.org/10.1016/j.tsf.2004.10.001
Autor:
J. R. Patel, Gene E. Ice, Nobumichi Tamura, John C. Bravman, B. C. Valek, Rozaliya Barabash, Ralph Spolenak
Publikováno v:
Microelectronic Engineering. 75:24-30
Electromigration-induced failure in metal interconnect constitutes a major reliability problem in the semiconductor industry. Recently, experimental techniques capable of probing grain orientation and stress with a spatial resolution compatible with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d995945ceca45e37abb90f01de531d3
https://doi.org/10.1016/j.mee.2003.09.009
https://doi.org/10.1016/j.mee.2003.09.009
Publikováno v:
Journal of Adhesion Science and Technology. 18:1497-1516
The effects of an ammonia-based catalyst, surface coverage, organofunctional group and chain length on silane adhesion promoter efficacy were examined at a benzocyclobutene (BCB)/silicon dioxide interface with silanes of varying functionality and cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943bf89649a465fc15ed607cef26241c
https://doi.org/10.1163/1568561042411268
https://doi.org/10.1163/1568561042411268
Autor:
Nobumichi Tamura, Richard Celestre, J. R. Patel, W. A. Caldwell, B. W. Batterman, B. C. Valek, William D. Nix, John C. Bravman, Ralph Spolenak, A. A. MacDowell, H. A. Padmore
Publikováno v:
Journal of Applied Physics. 94:3757-3761
Electromigration occurs when a high current density drives atomic motion from the cathode to the anode end of a conductor, such as a metal interconnect line in an integrated circuit. While electromigration eventually causes macroscopic damage, in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ca98e6e22c2fbb24a657fcd246d152
https://doi.org/10.1063/1.1600843
https://doi.org/10.1063/1.1600843
Autor:
J. R. Patel, Nobumichi Tamura, Ralph Spolenak, John C. Bravman, R.I. Barabash, B. C. Valek, G. E. Ice
Publikováno v:
Journal of Applied Physics. 93:5701-5706
Electromigration during accelerated testing can induce plastic deformation in apparently undamaged Al interconnect lines as recently revealed by white beam scanning x-ray microdiffraction. In the present article, we provide a first quantitative analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed7cf0b416852606c9b0dbbbb06bed2
https://doi.org/10.1063/1.1563033
https://doi.org/10.1063/1.1563033
Autor:
John C. Bravman, Nobumichi Tamura, Alastair A. MacDowell, Richard Celestre, Ralph Spolenak, B. C. Valek, J. R. Patel, B. W. Batterman, W. L. Brown, Howard A. Padmore
Publikováno v:
Journal of Synchrotron Radiation. 10:137-143
Scanning X-ray microdiffraction (microSXRD) combines the use of high-brilliance synchrotron sources with the latest achromatic X-ray focusing optics and fast large-area two-dimensional-detector technology. Using white beams or a combination of white
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2abc0f48ff67a3d200c1dea7b7d14006
https://doi.org/10.1107/s0909049502021362
https://doi.org/10.1107/s0909049502021362
Publikováno v:
Journal of Applied Physics. 93:1443-1451
This article reports the results of microtensile tests and transmission electron microscopy (TEM) analyses of micron-scale free-standing aluminum thin films. We fabricated the free-standing aluminum beams using micromachining procedures and tested th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29c02db31ae069d81ccff66af2a1ee0
https://doi.org/10.1063/1.1532933
https://doi.org/10.1063/1.1532933
Publikováno v:
Journal of Materials Research. 17:1863-1870
Wafer curvature was used to study the thermal–mechanical behavior of 1-μm Cu thin films capped with a 100-nm-thick Si3N4 layer. These films were grown with either a Ta or a Si3N4 underlayer. Films on Si3N4 that were exposed to oxygen at the film/c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27bef56e14e8ef006a75a3c8baf29cd3
https://doi.org/10.1557/jmr.2002.0275
https://doi.org/10.1557/jmr.2002.0275
Publikováno v:
Acta Materialia. 50:2395-2411
The effects of interface chemistry and alternating mechanical loads on subcritical debonding of thin polymer layers from inorganic dielectrics are of significant interest for the integrity of devices used in a range of modern technologies. However, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d373cd3907dbad0cbe1c93d44ff23ec
https://doi.org/10.1016/s1359-6454(02)00072-1
https://doi.org/10.1016/s1359-6454(02)00072-1
Publikováno v:
Journal of Applied Physics. 91:3653-3657
Void nucleation in aluminum interconnects passivated with silicon nitride was studied using a high voltage scanning electron microscope. Extensive stress-induced voiding was observed in these interconnects independent of the passivation thickness. So
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a1cef8f3ac2b5a6de306968a9bdc07
https://doi.org/10.1063/1.1450034
https://doi.org/10.1063/1.1450034