Zobrazeno 1 - 10
of 123
pro vyhledávání: '"John C Zolper"'
This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies
Autor:
Luke F. Lester, Randy J. Shul, Umesh Mishra, L. Zhang, John C. Zolper, P.C. Chang, Steven P. DenBaars, Albert G. Baca, C. G. Willison
Publikováno v:
IEEE Transactions on Electron Devices. 47:507-511
Junction field effect transistors (JFETs) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The dc and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9e8b462440e56c646410eb9f1fc902
https://doi.org/10.1109/16.824716
https://doi.org/10.1109/16.824716
Autor:
John C. Zolper, J. Han, James Robert Lothian, C. R. Abernathy, Randy J. Shul, A. Zeitouny, Moshe Eizenberg, Fan Ren, Xian-An Cao, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1221-1225
W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fe9348d9a42512606cf978e120ea58
https://doi.org/10.1116/1.581799
https://doi.org/10.1116/1.581799
Publikováno v:
Journal of Applied Physics. 86:1-78
The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea5a5b94e34c4463c28257c97a4cbb0
https://doi.org/10.1063/1.371145
https://doi.org/10.1063/1.371145
Publikováno v:
Defect and Diffusion Forum. :63-82
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43830491db7921e0a883b785c1b47307
https://doi.org/10.4028/www.scientific.net/ddf.157-159.63
https://doi.org/10.4028/www.scientific.net/ddf.157-159.63
Autor:
Fan Ren, Catherine Vartuli, John C. Zolper, J. D. MacKenzie, Randy J. Shul, Stephen J. Pearton, C. R. Abernathy
Publikováno v:
Solid-State Electronics. 41:1947-1951
Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AlN and InAlN. No enchants were found for the other nitrides, emphasiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb87f1cba00da6f1f9558a39e0dbb71
https://doi.org/10.1016/s0038-1101(97)00173-1
https://doi.org/10.1016/s0038-1101(97)00173-1
Publikováno v:
Thin Solid Films. :599-606
A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917e1e3d000edf6b7421dfec9f9c5d40
https://doi.org/10.1016/s0040-6090(97)00439-2
https://doi.org/10.1016/s0040-6090(97)00439-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :467-470
The implantation of Si-donors and Mg-acceptors in GaN was studied for doses from 1 × 1014 to 1 × 1016 cm−2 and annealing at 1100°C. The transport and luminescence properties were compared to Ar-implanted samples at the same doses. For a Si dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e0518121e9f678d2a5e3cbc7bbd3a4
https://doi.org/10.1016/s0168-583x(96)00973-1
https://doi.org/10.1016/s0168-583x(96)00973-1
Autor:
M. L. Lovejoy, Stephen J. Pearton, J. D. MacKenzie, Kenneth A. Jones, Fan Ren, Catherine Vartuli, S. M. Donovan, John C. Zolper, Randy J. Shul, Albert G. Baca, C. R. Abernathy, M. Hagerott-Crawford
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:802-806
W, WSi0.44, and Ti/Al contacts were examined on n+In0.65Ga0.35N, InN, and In0.75Al0.25N. W was found to produce low specific contact resistance (ǫc∼10−7 Ω cm2) ohmic contacts to InGaN, while WSix showed an as-deposited ǫc of 4×10−7 Ω cm2 b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40c69ca1e1aa6e3dcd72a8dbabb75e7
https://doi.org/10.1116/1.580711
https://doi.org/10.1116/1.580711
Autor:
Steve Pearton, J. D. MacKenzie, Albert G. Baca, A Jones, John C. Zolper, Catherine Vartuli, M. L. Lovejoy, C. R. Abernathy, Fan Ren, M. Hagerott-Crawford, Randy J. Shul
Publikováno v:
Scopus-Elsevier
The temperature dependence of the specific contact resistance of W and WSi 0.44 contacts on n + In 0.65 Ga 0.35 N and InN was measured in the range −50–125°C. The results were compared to theoretical values for different conduction mechanisms, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68515217d07a3e78bde211289a0fedd1
https://doi.org/10.1016/s0038-1101(96)00188-8
https://doi.org/10.1016/s0038-1101(96)00188-8