Zobrazeno 1 - 10
of 52
pro vyhledávání: '"John A. Allgair"'
Autor:
Chas Archie, Bhanwar Singh, Iraj Emami, Mark Caldwell, John A. Allgair, E. Solecky, Bryan J. Rice, Benjamin Bunday, Jason P. Cain
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 20:266-277
The conventional premise, long-touted among the semiconductor processing community, that metrology is a ldquonon-value-added necessary evil,rdquo is a misleading and dangerous assertion, which must be viewed as obsolete thinking. Many metrology appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc76cfeecfc4f93367995fef0f2d948
https://doi.org/10.1109/tsm.2007.901851
https://doi.org/10.1109/tsm.2007.901851
Autor:
Benjamin Bunday, Richard A. Allen, Domingo I. Garcia-Gutierrez, John A. Allgair, Ndubuisi G. Orji, Ronald G. Dixson, Michael W. Cresswell, Michael Bishop
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:044002
One of the key challenges in critical dimension (CD) metrology is finding suitable dimensional calibration standards. The transmission electron microscope (TEM), which produces lattice-resolved images having scale traceability to the SI (Internationa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd4027bf8e9040516309913858e359b
https://doi.org/10.1117/1.jmm.15.4.044002
https://doi.org/10.1117/1.jmm.15.4.044002
Autor:
Benjamin Bunday, Michael Bishop, Michael T. Postek, András E. Vladár, John A. Allgair, William J. Keery
Publikováno v:
SPIE Proceedings.
NIST has introduced a new standard for dimensional metrology and the calibration of the scanning electron microscope (SEM) scale identifi ed as Reference Material (RM) 8820. RM 8820 was primarily intended to be used for calibrating the X and Y scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e05459a2b5da7bae6765ef863cc56483
https://doi.org/10.1117/12.861595
https://doi.org/10.1117/12.861595
Autor:
William J. Keery, Michael T. Postek, Benjamin Bunday, Michael Bishop, John A. Allgair, András E. Vladár
Publikováno v:
Scanning Microscopy 2010.
Reference Material 8820 (RM 8820) is a new scanning electron microscope calibration reference material for nanotechnology and nanomanufacturingtion recently released by NIST. This standard was developed to be used primarily for X and Y scale (or magn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc96791da55becf8a942f846faaa6753
https://doi.org/10.1117/12.859118
https://doi.org/10.1117/12.859118
Autor:
Aaron Cordes, Vasiliki Tileli, Ram Peltinov, Konstantin Chirko, Benjamin Bunday, Mayaan Bar-Zvi, Daniel Bellido Aguilar, Bradley L. Thiel, Ofer Adan, John A. Allgair, Yohanan Avitan
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 32 nm node and beyond, new lithography techniques will be used, including immersion ArF (iArF) lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f5cc2a4d84c1d43b2de864106d34e7
https://doi.org/10.1117/12.846991
https://doi.org/10.1117/12.846991
Autor:
John A. Allgair, Benjamin Bunday, András E. Vladár, Michael Bishop, Michael T. Postek, William J. Keery
Publikováno v:
SPIE Proceedings.
A new multipurpose instrument calibration standard has been released by NIST. This standard was developed to be used primarily for X and Y scale (or magnification) calibrations of scanning electron microscopes from less than 10 times magnification to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de12a8ef7b6011deeee8a77a8663bef
https://doi.org/10.1117/12.848037
https://doi.org/10.1117/12.848037
Autor:
John A. Allgair, Michael T. Postek
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c924b3594c772b84592d2349bbbc690a
https://doi.org/10.1117/12.844943
https://doi.org/10.1117/12.844943
Autor:
Aaron Cordes, Eric Cottrell, Benjamin Bunday, Ram Peltinov, Sean Hand, John A. Allgair, Yohanan Avitan, Maayan Bar-Zvi, Ofer Adan, Vasiliki Tileli
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF (iArF) lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8affb4c50af509218e062f0ee0c1698
https://doi.org/10.1117/12.816249
https://doi.org/10.1117/12.816249
Autor:
Mark C. Kelling, Bernd Schulz, Jon-Tobias Hoeft, Matthew Sendelbach, William A. Muth, Benjamin Bunday, M. Zaitz, Andrew Brendler, Alok Vaid, Eric P. Solecky, Ron Fiege, Bill Banke, Srinivasan Rangarajan, Carlos Strocchia-Rivera, Andres Munoz, Carsten Hartig, John A. Allgair, Dmitriy Shneyder, Chas Archie
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Ever shrinking measurement uncertainty requirements are difficult to achieve for a typical metrology toolset, especially over the entire expected life of the fleet. Many times, acceptable performance can be demonstrated during brief evaluation period
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55aec1cd51f9aaf9d919e62dafa19930
https://doi.org/10.1117/12.814089
https://doi.org/10.1117/12.814089
Autor:
John A. Allgair, Michael T. Postek
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef2e2ecef77678c4a79607823a1653b
https://doi.org/10.1117/12.814683
https://doi.org/10.1117/12.814683