Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Johji Nishio"'
Autor:
Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Publikováno v:
Materials, Vol 7, Iss 10, Pp 7010-7021 (2014)
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed t
Externí odkaz:
https://doaj.org/article/bd553eef65eb41988614e749e5ab43c4
Publikováno v:
Journal of Electronic Materials. 52:679-690
Publikováno v:
Materials Science Forum. 1062:258-262
Double-rhombic shaped single Shockley stacking faults (1SSFs) were considered to have a converted threading edge dislocation (TED) on the shallower side of the initial basal plane dislocation segments. However, the structural analysis using transmiss
Publikováno v:
Journal of Electronic Materials.
Publikováno v:
Journal of Electronic Materials.
Publikováno v:
Journal of Electronic Materials. 50:6504-6511
A triangular single Shockley stacking fault (1SSF) in 4H-SiC, expanding from the surface to the substrate/epilayer interface, was investigated. The triangular 1SSF was observed during electroluminescence examination of PIN diodes that had line-and-sp
Publikováno v:
Materials Science Forum. 1004:376-386
Configurations of the basal plane dislocations in 4H-SiC epitaxial layers are classified into two types, having typical combinations of ‘straight Si-core and straight C-core’ and ‘straight Si-core and curved C-core’ partial dislocations. The
Publikováno v:
Journal of Electronic Materials. 49:5232-5239
The structure of partial dislocations (PDs), which surround triangular single Shockley stacking faults (1SSFs) expanded during electroluminescence observation in a 4H-SiC PiN diode, is investigated by photoluminescence (PL) imaging, PL spectroscopy,
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1001
Partial dislocation (PD) combinations near the substrate/epilayer interface and the epilayer surface of 4H-SiC are analyzed for bar-shaped single Shockley-type stacking faults (1SSFs) by plan-view transmission electron microscopy (TEM) with the aid o
Autor:
Johji Nishio, Aoi Okada, Kenji Hirohata, Mitsuaki Kato, Akira Kano, Akihiro Goryu, Chiharu Ota
Publikováno v:
Materials Science Forum. 963:263-267
Expansion of single Shockley stacking faults (SSFs) during forward current operation is an important issue, because it decreases the reliability of 4H-SiC bipolar devices. In this paper, we propose a method for analyzing SSF dynamics based on free en