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pro vyhledávání: '"Johans Steeven Restrepo"'
Autor:
Juan Manuel Gonzalez, Juan Manuel González, Johans Steeven Restrepo, Carolina Ortega Portilla, Alexander Ruden Muñoz, Federico Sequeda Osorio
Publikováno v:
Ingeniería y Ciencia, Vol 12, Iss 23 (2016)
Using Density Functional Theory (DFT) SiN and TiN structures were simulated, in order to study the influence of the silicon atoms insertion in the TiN lattice placed on interstitial and substitutional positions in a face centered cubic (FCC) crystall
Externí odkaz:
https://doaj.org/article/fd49c562716a45859154c24c1f2ea354
Publikováno v:
Materials Science in Semiconductor Processing. 91:377-382
In this work, we show the development of SiOxNy (silicon oxynitride) thin films using the laser ablation technique. Instead of commonly used precursor materials SiH4 and NH3 or N2, hereby, we report the deposition using crystalline silicon targets an