Zobrazeno 1 - 10 of 40 pro vyhledávání: '"Johannes von Borany"'
1
Akademický článek
Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Autor: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Publikováno v: Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-
Externí odkaz: https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
Zobrazit plný text záznamu
2
Akademický článek
IBC - ION BEAM CENTER
Autor: Johannes von Borany, Stefan Facsko, Annette Weissig
Publikováno v: Journal of large-scale research facilities JLSRF, Vol 3, p A125 (2017)
In the Ion Beam Center (IBC), various set-ups – electrostatic accelerators, ion implanters, plasma-based ion implantation equipment, low-energy ion tools, an ion microscope etc. – are combined into a unique facility for research and applications
Externí odkaz: https://doaj.org/article/ce3bb2139a534bfb98fbbc30f18aa20e
Zobrazit plný text záznamu
3
Effect of nitrogen ion implantation on the life time of WC-Co tools used in particleboard milling
Autor: Marcin Pisarek, Piotr Konarski, Jacek Wilkowski, Roman Böttger, Marek Barlak, Joanna Wachowicz, Johannes von Borany, Zbigniew Werner, Alicja Auriga
Publikováno v: Wood Material Science & Engineering. 17:521-532
This work explores an effect of nitrogen ion implantation on the life time of WC-Co tools used in particleboard milling. Nitrogen ions with different energy of 5, 50, and 500 keV and fluence of 1e1...
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a6eb7e1744105418fa4a763bac2071a
https://doi.org/10.1080/17480272.2021.1900391
Zobrazit plný text záznamu
4
Spaceborne GNSS-Receiver Heritage Leveraged on New Space
Autor: Stefan Zehetmayer, Manfred Sust, Kai Zajac, Dirk Plettemeier, Roman Zangl, Markus Schutz, Martin Laabs, Johannes von Borany, Franz Zangerl
Publikováno v: ENC
Global Navigation Satellite System receivers have become inevitable for space missions. Although space qualified components and proven receiver concepts with space heritage exist, dedicated products are required for NewSpace applications due to cost
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f0c96110ad80ce01b7a10e22fc4b40f
https://doi.org/10.23919/enc48637.2020.9317497
Zobrazit plný text záznamu
5
Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Autor: Wolfhard Möller, Johannes von Borany, Hans-Jürgen Engelmann, Xiaomo Xu, Gregor Hlawacek, Thomas Prüfer, Lothar Bischoff, Stefan Facsko, Karl-Heinz Heinig, Daniel Wolf, René Hübner
Publikováno v: Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
Beilstein Journal of Nanotechnology
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-ener
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afcad06d35e6724b21babfdf8884d93b
https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
Zobrazit plný text záznamu
6
Cluster Tool for In Situ Processing and Comprehensive Characterization of Thin Films at High Temperatures
Autor: Matthias Krause, G. Abrasonis, Daniel Hanf, Robert Wenisch, Jens Zscharschuch, Ramón Escobar-Galindo, Frank Lungwitz, Sibylle Gemming, Johannes von Borany, René Heller, René Hübner
Publikováno v: 16th International Conference on Plasma Surface Engineering, 16.-21.09.2018, Garmisch-Partenkirchen, Deutschland
Analytical Chemistry
Analytical Chemistry 90(2018), 7837-7842
XV Congreso Nacional de Materiales/ Iberian Meeting on Materials Science, 04.-06.07.2018, Salamanca, Spanien
A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caea111c007ba8982781c8b3f621d24c
https://doi.org/10.1021/acs.analchem.8b00923
Zobrazit plný text záznamu
8
Structural and optical studies of Pr implanted ZnO films subjected to a long-time or ultra-fast thermal annealing
Autor: Slawomir Prucnal, Renata Ratajczak, Cyprian Mieszczynski, Elzbieta Guziewicz, Wolfgang Skorupa, Roman Böttger, J. Gaca, M. Wojcik, M. Stachowicz, Andrzej Turos, René Heller, Johannes von Borany, D. Snigurenko
Publikováno v: Thin Solid Films 643(2017), 24-30
Epitaxial thin ZnO films grown by Atomic Layer Deposition were implanted with 150 keV Pr ions to a fluence of 1 × 10 15 at/cm 2 . Implanted samples were subjected to two different kinds of annealing: rapid thermal annealing (RTA) and millisecond-ran
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fda95f7014eb6cea67f0f4eb7f329254
https://doi.org/10.1016/j.tsf.2017.08.001
Zobrazit plný text záznamu
9
Computer modeling of single-layer nanocluster formation in a thin SiO 2 layer buried in Si by ion mixing and thermal phase decomposition
Autor: Wolfhard Möller, Hans-Jürgen Engelmann, Johannes von Borany, Daniel Wolf, Thomas Prüfer, Xiaomo Xu, Karl-Heinz Heinig
Publikováno v: Journal of Applied Physics
A single sheet of Si nanoclusters with an average diameter of about 2 nm has been formed in a 30 nm Si/7 nm SiO2/Si layer stack by 50 and 60 keV Si+ ion-beam mixing at room temperature and fluences between 8.5 ⋅ 1015 and 2.6 ⋅ 1016 ions/cm2 and b
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c8d716b920989e63ffe9de6c9cce09
Zobrazit plný text záznamu
10
Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
Autor: Ahmed Gharbi, Karl-Heinz Heinig, Johannes von Borany, Hans-Jürgen Engelmann, Wolfhard Möller, Raluca Tiron, Nico Klingner, Gregor Hlawacek, Xiaomo Xu
Publikováno v: Semiconductor Science and Technology 35(2020)1, 015021
Semiconductor Science and Technology
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne+ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a3fdcd6f35e7f7f2c07abc9820ec76
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje