Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Johannes Strassner"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2023 (2023)
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the
Externí odkaz:
https://doaj.org/article/cd1241f7ad484f93ab9efaa6f7d6fd18
Publikováno v:
Advances in Materials Science and Engineering, Vol 2022 (2022)
Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are u
Externí odkaz:
https://doaj.org/article/ee2a267d9bad424482888408af43e81a
Publikováno v:
International Journal of Analytical Chemistry, Vol 2022 (2022)
Electrically conducting liquid droplets can be activated and moved by electrowetting-on-dielectric (EWOD) and optoelectrowetting (OEW). An important application is droplet manipulation in digital microfluidics (DMF, lab-on-a-chip 2.0) as a chip-sized
Externí odkaz:
https://doaj.org/article/51a8dca7f43f4350a2808b0101c5e1e2
Publikováno v:
Advances in Materials Science and Engineering, Vol 2021 (2021)
We present a study of optoelectronically active Ga(As)As quantum dots (QDs) on Al-rich AlxGa1-xAs layers with Al concentrations up to x = 90%. So far, however, it has not been possible to grow optoelectronically active Ga(As)As QDs epitaxially direct
Externí odkaz:
https://doaj.org/article/5b05268a42a046f998aca48278e60608
Publikováno v:
International Journal of Analytical Chemistry, Vol 2021 (2021)
Meanwhile, electrowetting-on-dielectric (EWOD) is a well-known phenomenon, even often exploited in active micro-optics to change the curvature of microdroplet lenses or in analytical chemistry with digital microfluidics (DMF, lab on a chip 2.0) to mo
Externí odkaz:
https://doaj.org/article/cb930afe90f646a2bd1bf0df99b3ec2f
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075116-075116-6 (2019)
A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (R
Externí odkaz:
https://doaj.org/article/e0ff2cae7c6e499eac19d6233623567a
Autor:
Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, Henning Fouckhardt
Publikováno v:
Micromachines, Vol 12, Iss 5, p 502 (2021)
Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as lon
Externí odkaz:
https://doaj.org/article/384a1b5e0ce349f58bc05d173e6e0965
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1783-1793 (2016)
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is
Externí odkaz:
https://doaj.org/article/08c4ab3abe1f4c8092f9d3d388b5ce0c
Publikováno v:
Applied Surface Science. 611:155769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6afde09eca93bb5a703ce72d95d0cd2
https://doi.org/10.1016/j.apsusc.2022.155769
https://doi.org/10.1016/j.apsusc.2022.155769
Autor:
Emerson Oliveira, Henning Fouckhardt, Christoph Doering, Johannes Strassner, Johannes M. Richter, Guilherme Sombrio
Publikováno v:
Micromachines
Volume 12
Issue 5
Micromachines, Vol 12, Iss 502, p 502 (2021)
Volume 12
Issue 5
Micromachines, Vol 12, Iss 502, p 502 (2021)
Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as lon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e9e881f6b506aa82e2b49e2e006552e