Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Johannes Rinder"'
Publikováno v:
Journal of Non-Crystalline Solids: X, Vol 5, Iss , Pp - (2020)
In this study, a variation of the substrate temperature during plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon is reported, which revealed a local minimum of the optical bandgap. It is shown, that the silicon monohydride b
Externí odkaz:
https://doaj.org/article/ab74c91e43d0498ea8cc0c6e3eb64926
Autor:
Barbara Terheiden, Swetlana Weit, Raphael Glatthaar, Giso Hahn, Jonathan Steffens, Johannes Rinder, Sören Möller
Publikováno v:
IEEE Journal of Photovoltaics. 10:1624-1631
Passivating contacts based on polycrystalline silicon (poly-Si) on an interfacial oxide are limited by parasitic absorption, which may be reduced by incorporation of foreign elements in the poly-Si layer. In this study, the influence of carbon incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179c7f46630e8b2fdd771adeeedb3e76
https://doi.org/10.1109/jphotov.2020.3023506
https://doi.org/10.1109/jphotov.2020.3023506
The rf magnetron sputter deposition of a-Si during fabrication of passivating contacts based on poly-Si on top of an interfacial silicon oxide (poly-Si/SiOx) and a possible sputter damage is investigated, as it is also observed during transparent con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efd34b35a7867df7b8bc55d0ea50c391
Autor:
Giso Hahn, Amir Dastgheib-Shirazi, Johannes Rinder, Michael Steyer, Gabriel Micard, Barbara Terheiden
Publikováno v:
Energy Procedia. 92:457-465
Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter’s electrically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70345a8cb7c6e248243dcbf9bf0f9c8f
Publikováno v:
Energy Procedia, ISSN 1876-6102, 2015, Vol. 77
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31685e643d25b5a45b8ee4b69c1b55bf
https://oa.upm.es/41001/
https://oa.upm.es/41001/