Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Johannes M. C. Stork"'
Autor:
James H. Comfort, Emmanuel F. Crabbe, Ching-Te Chuang, K. Chin, Gary L. Patton, Johannes M. C. Stork
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:225-228
A detailed study on the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuit applications is presented. It is shown that for the standard ECL (emitter-coupled logic) circuit, the leverage of high f/sub T/ is limited by the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1b97186dee6b57bfbe3baf63860113
https://doi.org/10.1109/4.127348
https://doi.org/10.1109/4.127348
Publikováno v:
Applied Surface Science. :377-386
Due to advances in epitaxial techniques, the ability to deposit high-quality epitaxial silicon-germanium alloys at lower temperature, has opened up the applications of pseudomorphicSi1−xGex films in advanced bipolar transistors and in novel device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b0f4b79492cf77dfe91cf2f98b15cd
https://doi.org/10.1016/0169-4332(91)90361-m
https://doi.org/10.1016/0169-4332(91)90361-m
Autor:
James H. Comfort, Gary L. Patton, K. Chin, Emmanuel F. Crabbe, Ching-Te Chuang, Johannes M. C. Stork
Publikováno v:
Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
The authors present a detailed study on the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuit applications. It is shown that, for the standard ECL (emitter coupled logic) circuit, the leverage of high f/sub T/ is limited b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba9822bb1c8c65643f73333297b3d9bd
https://doi.org/10.1109/bipol.1991.160973
https://doi.org/10.1109/bipol.1991.160973
Autor:
David L. Harame, David M. Richey, Emmanuel F. Crabbe, John D. Cressler, James H. Comfort, Alvin J. Joseph, Johannes M. C. Stork
Publikováno v:
SPIE Proceedings.
We present the first measurements of silicon-generated (SiGe) heterojunction bipolar transistors (HBT) in the liquid-helium temperature regime. We have measured the dc characteristics of SiGe HBTs from two different profile designs over the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df35ddad8cbf36822bea19b033f94c1b
https://doi.org/10.1117/12.178491
https://doi.org/10.1117/12.178491
Autor:
David L. Harame, Subramanian S. Iyer, James H. Comfort, Gary L. Patton, V. P. Kesan, Yuan-Chen Sun, Bernard S. Meyerson, Johannes M. C. Stork, M. Arienzo, Emmanuel F. Crabbe
Publikováno v:
MRS Proceedings. 281
SiGe alloys have been successfully applied to a number of semiconductor devices, including bipolar heterojunction transistors, field effect transistors (FET's), and optoelectronic devices and structures. This review paper will first summarize the res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62be49f769b3e24cde6870a5203c047
https://doi.org/10.1557/proc-281-401
https://doi.org/10.1557/proc-281-401
Autor:
Emmanuel F. Crabbe, Subramanian S. Iyer, Gary L. Patton, James H. Comfort, Yuan-Chen Sun, David L. Marame, Bernard S. Meyerson, Johannes M. C. Stork, M. Arienzo
Publikováno v:
MRS Proceedings. 220
Strained layer growth of SiGe on Si by either Molecular Beam Epitaxy (MBE) or various methods of Chemical Vapor Deposition (CVD), including Limited Reaction Processing (LRP) and Ultra High Vacuum CVD (UHV/CVD) have been used to realize narrow bandgap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9e39aa30908f01cd4056a7781c28ad
https://doi.org/10.1557/proc-220-421
https://doi.org/10.1557/proc-220-421