Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Johannes Jobst"'
Autor:
Johannes Jobst, Alexander J. H. van der Torren, Eugene E. Krasovskii, Jesse Balgley, Cory R. Dean, Rudolf M. Tromp, Sense Jan van der Molen
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Heterostructures of graphene and hexagonal boron nitride have great potential for high-mobility electronics, yet little is known about the electronic interaction between these two atomically thin materials. Here, the authors perform angle-resolved re
Externí odkaz:
https://doaj.org/article/e09a255f228345dca396bbfadf1c3f7e
Publikováno v:
Physical Review Materials. 7
Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large variation in electron transport properties is observed. Here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ab29a121eb957563ea0fcdfc7b5c9f5
https://doi.org/10.1103/physrevmaterials.7.034001
https://doi.org/10.1103/physrevmaterials.7.034001
Autor:
Tobias A. de Jong, Xingchen Chen, Johannes Jobst, Eugene E. Krasovskii, Ruud M. Tromp, Sense Jan van der Molen
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological edge states, imaging them has been instrumental to det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5de75ad03efd09116f8a1decb4d8edcd
http://arxiv.org/abs/2207.14616
http://arxiv.org/abs/2207.14616
Autor:
Yu Zhang, Sense Jan van der Molen, Albert M. Brouwer, Johannes Jobst, Ivan Bespalov, Rudolf M. Tromp, Sonia Castellanos, Jarich Haitjema
Publikováno v:
ACS Applied Materials and Interfaces
ACS Applied Materials and Interfaces, 12(8), 9881-9889
ACS Applied Materials and Interfaces, 12(8), 9881-9889. American Chemical Society
ACS Applied Materials and Interfaces, 12(8), 9881-9889
ACS Applied Materials and Interfaces, 12(8), 9881-9889. American Chemical Society
Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed that low-energy electrons (LEEs) generated in the resist materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15542b230b9ecf3b966cd83aa43dbeb4
https://doi.org/10.1021/acsami.9b19004
https://doi.org/10.1021/acsami.9b19004
Autor:
Louk Rademaker, Vincent Stalman, Simone Lisi, Andrew Hunter, Milan P. Allan, Sense Jan van der Molen, Irène Cucchi, Xiaobo Lu, Petr Stepanov, Viktor Kandyba, Tobias A. de Jong, Alexei Barinov, Felix Baumberger, Anna Tamai, Kenji Watanabe, Johannes Jobst, Tjerk Benschop, Florian Margot, José Durán, Dmitri K. Efetov, Maarten Leeuwenhoek, Edoardo Cappelli, Takashi Taniguchi, Alessio Giampietri
Publikováno v:
Nature physics, Vol. 17, No 2 (2020) pp. 189-193
Nature Physics
Nature Physics, 17, 189-193
Nature Physics
Nature Physics, 17, 189-193
Transport experiments in twisted bilayer graphene have revealed multiple superconducting domes separated by correlated insulating states1–5. These properties are generally associated with strongly correlated states in a flat mini-band of the hexago
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df13ab2314b0f0597c8cba0b8ea20009
https://archive-ouverte.unige.ch/unige:155114
https://archive-ouverte.unige.ch/unige:155114
Publikováno v:
Ultramicroscopy. 183:8-14
In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::099a46ae78e816b9c82129981c33080e
https://doi.org/10.1016/j.ultramic.2017.10.009
https://doi.org/10.1016/j.ultramic.2017.10.009
Autor:
Guus Rijnders, Mark Huijben, Gertjan Koster, Johan E. ten Elshof, M. B. S. Hesselberth, Zhaoliang Liao, Sense Jan van der Molen, Alexander J. H. van der Torren, Johannes Jobst, Jan Aarts, Huiyu Yuan
Publikováno v:
Scientific Reports
Scientific reports, 9(1):17617. Nature Publishing Group
Scientific Reports, 9, 17617
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific reports, 9(1):17617. Nature Publishing Group
Scientific Reports, 9, 17617
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
The two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO3 substrates for the growth limits its applicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff7c3732495011a24bc0eb434de2b3ea
http://arxiv.org/abs/1910.05781
http://arxiv.org/abs/1910.05781
Autor:
T. A. de Jong, Johannes Jobst, S. J. van der Molen, H. Schopmans, Rudolf M. Tromp, D.N.L. Kok, A. J. H. van der Torren
Publikováno v:
Ultramicroscopy, 213, 112913
For many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space information. Its unique strength, however, is that all measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d4cad1a36078e18798114c4c94e840e
http://arxiv.org/abs/1907.13510
http://arxiv.org/abs/1907.13510
Publikováno v:
Physical Review Letters, 123(8), 086802
Physical Review Letters
Physical Review Letters
In contrast to the in-plane transport electron mean-free path in graphene, the transverse mean-free path has received little attention and is often assumed to follow the 'universal' mean-free path (MFP) curve broadly adopted in surface and interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ec7b2625093f2da7aae7d66435a815e
https://pubmed.ncbi.nlm.nih.gov/31491219
https://pubmed.ncbi.nlm.nih.gov/31491219
Autor:
Johannes Jobst, Eugene E. Krasovskii, Philip Kim, Tobias A. de Jong, Hyobin Yoo, Sense Jan van der Molen
Publikováno v:
Physica Status Solidi (b), 255(12), 1800191
Physica Status Solidi (b)
Physica Status Solidi (b)
The properties of Van der Waals (VdW) heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here, the use of spectroscopic low energy electron microscopy (LEEM) and micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e179221e4d3c43f34880384f26b13ea
http://hdl.handle.net/1887/62920
http://hdl.handle.net/1887/62920