Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Johannes Georg Laven"'
Autor:
Thomas Wuebben, Moriz Jelinek, Martin Faccinelli, Hans-Joachim Schulze, Peter Hadley, Johannes Georg Laven
Publikováno v:
physica status solidi c. 13:750-755
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc47dfa99e4ef64dc300aeb5aefec4b
https://doi.org/10.1002/pssc.201600038
https://doi.org/10.1002/pssc.201600038
Autor:
Mathias Rommel, H.-J. Schulze, S. Kirnstoetter, Johannes Georg Laven, Moriz Jelinek, Lothar Frey, Werner Schustereder
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:240-243
In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6304db3b743c7e56581e38925c7cd79
https://doi.org/10.1016/j.nimb.2015.07.078
https://doi.org/10.1016/j.nimb.2015.07.078
Autor:
Reinhart Job, Moriz Jelinek, Lothar Frey, H.-J. Schulze, Werner Schustereder, Naveen Ganagona, Mathias Rommel, Johannes Georg Laven
Publikováno v:
Solid State Phenomena. 242:169-174
Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf8785bf8765fbd3c5270ca0217cf522
https://doi.org/10.4028/www.scientific.net/ssp.242.169
https://doi.org/10.4028/www.scientific.net/ssp.242.169
Autor:
Mathias Rommel, Moriz Jelinek, Lothar Frey, Werner Schustereder, H.-J. Schulze, Naveen Ganagona, Johannes Georg Laven
Publikováno v:
Solid State Phenomena. 242:175-183
– For a conventional proton implantation doping process applied to crystalline silicon comprising proton implantation and subsequent furnace annealing the effect of the substrate temperature set during implantation is examined for temperatures betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1262f2aad3a16cf7e331cd2a7d8fc88
https://doi.org/10.4028/www.scientific.net/ssp.242.175
https://doi.org/10.4028/www.scientific.net/ssp.242.175
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
The overall growing trend towards electrification and, at the same time, the urgent need to minimize energy consumption strongly requires higher energy efficiency in power electronics. We present a new technology concept for next generation 1200 V IG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dedf0c5a3851481efe317627fc057816
https://doi.org/10.23919/ispsd.2017.7988895
https://doi.org/10.23919/ispsd.2017.7988895
Autor:
Moriz Jelinek, Werner Schustereder, Lothar Frey, H.-J. Schulze, Reinhart Job, Mathias Rommel, Johannes Georg Laven
Publikováno v:
physica status solidi (b). 251:2189-2192
Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at fluences and annealing temperatures typically used for proton-implantation doping are investigated. For proton fluences in the range of several 1013 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f27a4133cad026d141a3429788491de
https://doi.org/10.1002/pssb.201400028
https://doi.org/10.1002/pssb.201400028
Autor:
Stefan Kirnstoetter, Martin Faccinelli, Peter Hadley, Johannes Georg Laven, Moriz Jelinek, Hans-Joachim Schulze, Werner Schustereder
Publikováno v:
physica status solidi c. 11:1707-1710
Electron Beam Induced Current (EBIC) measurements were used to produce cross sectional images of superjunction power transistors. These images show how the depletion width expands under reverse bias. Superjunctions are alternating p- and n-type doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0219b51d975a7b2ba4493e5928a1bbdc
https://doi.org/10.1002/pssc.201400050
https://doi.org/10.1002/pssc.201400050
Autor:
Christian Gspan, Stefan Kirnstoetter, Johannes Georg Laven, Werner Grogger, Werner Schustereder, Peter Hadley, Moriz Jelinek, Hans-Joachim Schulze, Martin Faccinelli
Publikováno v:
physica status solidi c. 11:1545-1550
Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2553c5925204b9cbc1ff2e1ae16d7273
https://doi.org/10.1002/pssc.201400051
https://doi.org/10.1002/pssc.201400051
Autor:
Werner Schustereder, Martin Faccinelli, Stefan Kirnstoetter, Johannes Georg Laven, Peter Hadley
Publikováno v:
physica status solidi c. 11:1583-1588
The concentration of defects in silicon can be changed by ion implantations and thermal annealing steps. Some of the defects incorporated during these processes form complexes which can act as donors or acceptors and their concentration can even over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a7db125727256bbefc27997079e80c
https://doi.org/10.1002/pssc.201400045
https://doi.org/10.1002/pssc.201400045
Autor:
H.-J. Schulze, Martin Faccinelli, Peter Hadley, Stefan Kirnstötter, Johannes Georg Laven, Moriz Jelinek, Werner Schustereder
Publikováno v:
Solid State Phenomena. :311-316
Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8988b82d555875dece894c6a215599f2
https://doi.org/10.4028/www.scientific.net/ssp.205-206.311
https://doi.org/10.4028/www.scientific.net/ssp.205-206.311