Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Johannes, Boy"'
Publikováno v:
APL Materials, Vol 12, Iss 5, Pp 051107-051107-8 (2024)
The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and
Externí odkaz:
https://doaj.org/article/e720155b5b3a49a699d28a0997c4c9a0
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055005-055005-7 (2020)
The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to
Externí odkaz:
https://doaj.org/article/d2c8e7b6cbde45bbb06c4568113e854b
Publikováno v:
Materials Research Express, Vol 9, Iss 6, p 065902 (2022)
This work provides the first experimental determination of the low-temperature thermal properties for novel highly pure single-crystalline ZnGa _2 O _4 . The temperature dependence of the thermal conductivity, diffusivity and specific heat capacity o
Externí odkaz:
https://doaj.org/article/84f97c8cf67d4b819d7f29f34258da22
Autor:
Johannes Boy, Martin Handwerg, Robin Ahrling, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, Saskia F. Fischer
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022526-022526-6 (2019)
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-
Externí odkaz:
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd
Akademický článek
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Autor:
R. Mitdank, Saskia F. Fischer, Robin Ahrling, Johannes Boy, Günter Wagner, Olivio Chiatti, Martin Handwerg, Zbigniew Galazka
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aed221c1b70c5d7597040c4a195e80a
https://doi.org/10.1038/s41598-019-49238-2
https://doi.org/10.1038/s41598-019-49238-2
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055005-055005-7 (2020)
The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d5cd03c5e672f23532442d9501905f9
https://doi.org/10.1063/5.0002847
https://doi.org/10.1063/5.0002847
Autor:
Philipp A. Lang, Heiko Reffelt, Christina Alter, Rianne Nederlof, André Heinen, Priyadarshini Panjwani, Jelena Vasilevska, Annika Raupach, Maria Grandoch, Tengis Tschaidse, Johannes Boy, Anne Petz, Karl Köhrer, André Spychala, Axel Gödecke, Patrick Petzsch, Jens W. Fischer, Stefanie Gödecke
Insulin-like growth factor 1 (IGF1) is an anabolic hormone that controls the growth and metabolism of many cell types. However, IGF1 also mediates cardio-protective effects after acute myocardial infarction (AMI), but the underlying mechanisms and ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aad09c174a99e940775c8a2b4f84968
https://europepmc.org/articles/PMC6319026/
https://europepmc.org/articles/PMC6319026/
Autor:
Robin, Ahrling, Johannes, Boy, Martin, Handwerg, Olivio, Chiatti, Rüdiger, Mitdank, Günter, Wagner, Zbigniew, Galazka, Saskia F, Fischer
Publikováno v:
Scientific Reports
Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5dac6c56e02fd657c6086d4f34a19f24
https://pubmed.ncbi.nlm.nih.gov/31511538
https://pubmed.ncbi.nlm.nih.gov/31511538
Autor:
Günter Wagner, Zbigniew Galazka, R. Mitdank, Saskia F. Fischer, Martin Handwerg, Robin Ahrling, Johannes Boy
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022526-022526-6 (2019)
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ddd3fab1fbcf0559a5e9fd8241fecb1
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd