Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Johann Cervenka"'
Publikováno v:
Journal of Computational Electronics. 20:2052-2061
We discuss boundary value problems for the characteristic stationary von Neumann equation (stationary sigma equation) and the stationary Wigner equation in a single spatial dimension. The two equations are related by a Fourier transform in the non-sp
Publikováno v:
Journal of Computational Electronics. 20:2104-2110
The Wigner formalism is a convenient way of describing quantum mechanical effects through a framework of distribution functions in phase space. Currently, there are stochastic and deterministic approaches in use. In our deterministic method, the crit
Autor:
Johann Cervenka, Robert Kosik, Markus Jech, Martin Vasicek, Markus Gritsch, Siegfried Selberherr, Tibor Grasser
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4189f54b2089c808abb298ca0c84e56
https://doi.org/10.1007/978-3-030-79827-7_37
https://doi.org/10.1007/978-3-030-79827-7_37
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Quantum electron transport in modern semiconductor devices can be described by a Wigner equation which is formally similar to the classical Liouville equation. The stationary Wigner equation has a singularity at zero momentum (k=0). In order to get a
Publikováno v:
Large-Scale Scientific Computing ISBN: 9783030410315
LSSC
LSSC
The Wigner equation describing stationary quantum transport has a singularity at the point \(k=0\). Deterministic solution methods usually deal with the singularity by just avoiding that point in the mesh (e.g., Frensley’s method). Results from suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da324b016f53bb206c8c7118c92ed27
https://doi.org/10.1007/978-3-030-41032-2_46
https://doi.org/10.1007/978-3-030-41032-2_46
Autor:
Tibor Grasser, Yu. Yu. Illarionov, Mikhail I. Vexler, Stanislav Tyaginov, Johann Cervenka, Markus Karner
Publikováno v:
Current Applied Physics. 15:78-83
We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF 2 /Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of
Autor:
J. Franco, Tibor Grasser, Yu. Yu. Illarionov, Markus Bina, Stanislav Tyaginov, Mikhail I. Vexler, B. Kaczer, Johann Cervenka
Publikováno v:
Journal of Computational Electronics. 13:733-738
We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to stand
Autor:
Oliver Triebl, Hubert Enichlmair, Ivan A. Starkov, Christoph Jungemann, Hajdin Ceric, Rainer Minixhofer, Johann Cervenka, Stanislav Tyaginov, Jong Mun Park, Markus Karner, Sara Carniello, E. Seebacher, Tibor Grasser, Ch. Kernstock
Publikováno v:
Microelectronics Reliability. 50:1267-1272
We refine our approach for hot-carrier degradation modeling based on a thorough evaluation of the carrier energy distribution by means of a full-band Monte–Carlo simulator. The model is extended to describe the linear current degradation over a wid
Publikováno v:
ECS Transactions. 23:345-352
The effect of the microstructure on the electromigration failure development is analyzed. We investigate the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution. Also, the effect of the
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:9-19
The demanding task of assessing long-time interconnect reliability can only be achieved by combination of experimental and technology computer-aided design (TCAD) methods. The basis for a TCAD tool is a sophisticated physical model which takes into a