Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Johan W. Weijtmans"'
Autor:
R. Takalkar, Anita Madan, Dominic J. Schepis, Eric C. Harley, Bin Yang, Abhishek Dube, Teresa L. Pinto, Zhibin Ren, Thomas N. Adam, Linda Black, Z. Zhu, Johan W. Weijtmans, Rainer Loesing, Jinghong Li, Ashima B. Chakravarti
Publikováno v:
ECS Transactions. 16:325-332
In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement [1-3]. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC:P films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d314f9756c2842729e426ac06916377
https://doi.org/10.1149/1.2986790
https://doi.org/10.1149/1.2986790
Autor:
Scott Luning, Ashima B. Chakravarti, Z. Zhu, A. Gehring, Anita Madan, Alexander Reznicek, Guangrui Xia, R. Takalkar, Dan Mocuta, Dominic J. Schepis, B. Yang, Thomas N. Adam, E. Leobandung, Ka Kong Chan, J. Faltermeier, J. P. de Souza, Zhibin Ren, John Li, Rohit Pal, Eric C. Harley, Edward P. Maciejewski, Brian J. Greene, Abhishek Dube, D.-G. Park, M. Cai, D. K. Sadana, Linda Black, Bin Yang, Johan W. Weijtmans, G. Pei
Publikováno v:
ECS Transactions. 16:317-323
Summary In summary, this work demonstrates that integrating ISPD eSi:C stressor in the thick-oxide long-channel nMOS source and drain is feasible. Key challenges lie in both high-quality ISPD eSi:C EPI development and modification of the conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479e8a9b274b3fc5f4f083f4de0812c6
https://doi.org/10.1149/1.2986789
https://doi.org/10.1149/1.2986789