Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Johan V. Knutsson"'
Autor:
Yi Liu, Johan V. Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, Kimberly A. Dick, Chris J. Palmstrøm, Anders Mikkelsen, Rainer Timm
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Site-selected crystal material synthesis at the atomic scale has been a long-standing challenge. Here the authors use nanowire crystal phase heterostructures as templates for self-selective growth of one- and two-dimensional GaBi nanostructures, whic
Externí odkaz:
https://doaj.org/article/510ad5ed5c0d459897dc04865d63585f
Autor:
Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, Sarah R. McKibbin, Andrea Troian, Olof Persson, Samuli Urpelainen, Jan Knudsen, Joachim Schnadt, Anders Mikkelsen
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, wi
Externí odkaz:
https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40
Autor:
Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In
Externí odkaz:
https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575