Výsledky vyhledávání - "Johan V. Knutsson"

Akademický článek

Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces

Autor: Yi Liu, Johan V. Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, Kimberly A. Dick, Chris J. Palmstrøm, Anders Mikkelsen, Rainer Timm

Publikováno v: Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)

Site-selected crystal material synthesis at the atomic scale has been a long-standing challenge. Here the authors use nanowire crystal phase heterostructures as templates for self-selective growth of one- and two-dimensional GaBi nanostructures, whic

Externí odkaz: https://doaj.org/article/510ad5ed5c0d459897dc04865d63585f

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Akademický článek

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

Autor: Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, Sarah R. McKibbin, Andrea Troian, Olof Persson, Samuli Urpelainen, Jan Knudsen, Joachim Schnadt, Anders Mikkelsen

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)

Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, wi

Externí odkaz: https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40

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Akademický článek

InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition

Autor: Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm

Publikováno v: AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)

Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In

Externí odkaz: https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575

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