Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Johan Seger"'
Autor:
Bryant, Randal E., Carl-Johan Seger
Ternary system modeling involves extending the traditional set of binary values { 0,1} with a third value X indicating an unknown or indeterminate condition. By making this extension, we can model a wider range of circuit phenomena. We can also effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27760947e74c68ddc849809ee00425fa
Autor:
Johan Seger, Mikael Östling, Per-Erik Hellström, Eva Tois, Dongping Wu, S.-L. Zhang, M. von Haartman, Marko Tuominen
Publikováno v:
Microelectronic Engineering. 77:36-41
Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-x dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516a8ca8e81e32e00329daf9f41b8c8d
https://doi.org/10.1016/j.mee.2004.08.004
https://doi.org/10.1016/j.mee.2004.08.004
Autor:
Johan Seger, Shi-Li Zhang, Fredric Ericson, Tobias Jarmar, Henry H. Radamson, Zhibin Zhang, Ulf Smith
Publikováno v:
Journal of Applied Physics. 96:1919-1928
The morphological stability of NiSi1−uGeu ternary alloy films formed by reacting Ni with single-crystal (sc) and polycrystalline (poly) Si1−xGeu is studied (u can be different from x). The agglomeration of NiSi1−uGeu films on Si0.7Ge0.3 occurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7118e4f779cf0dea894d9cbfe21335b
https://doi.org/10.1063/1.1766088
https://doi.org/10.1063/1.1766088
Publikováno v:
Journal of Applied Physics. 93:4480-4484
The influence of a Nb layer between Si and Ti on the formation of TiSi2 in small-feature contacts and of the substrate doping level has been studied using transmission electron microscopy in combination with convergent-beam electron diffraction. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa5fda2f53f313becf4b96c6dccb22f
https://doi.org/10.1063/1.1555270
https://doi.org/10.1063/1.1555270
Autor:
Shi-Li Zhang, Johan Seger
Publikováno v:
Thin Solid Films. 429:216-219
NiSi 0.8 Ge 0.2 film formed on a strained Si 0.8 Ge 0.2 layer epitaxially grown on a Si(100) substrate wafer is morphologically stable up to 750 °C. The NiSi 0.8 Ge 0.2 film is found to be strongly oriented along its 〈010〉 direction. This remark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9cf715f7bab9d2dc43592d1b4d7223
https://doi.org/10.1016/s0040-6090(03)00062-2
https://doi.org/10.1016/s0040-6090(03)00062-2
Publikováno v:
Journal of Applied Physics. 92:7193-7199
Continuous and uniform Ni(Si,Ge) layers are formed on polycrystalline Si and Si0.42Ge0.58 substrate films at 500 degreesC by rapid thermal processing. The germanosilicide is identified as NiSi0.42G ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0127eeebc042dcd0c8cc7eec5bb443fe
https://doi.org/10.1063/1.1522491
https://doi.org/10.1063/1.1522491
Autor:
S.-L. Zhang, Mikael Östling, Wei-Min Li, M. von Haartman, E. Vainonen-Ahlgren, Per-Erik Hellström, A.-C. Lindgren, Jörgen Olsson, Eva Tois, G. Sjoblom, S Persson, Johan Seger, H.-O. Blom, Dongping Wu, Marko Tuominen
Publikováno v:
IEEE Electron Device Letters. 24:171-173
Proof-of-concept pMOSFETs with a strained-Si/sub 0.7/Ge/sub 0.3/ surface-channel deposited by selective epitaxy and a TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack grown by atomic layer chemical vapor deposition (ALD) techniques wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15134027c48a74994df268c8dcb144a7
https://doi.org/10.1109/led.2003.809524
https://doi.org/10.1109/led.2003.809524
Publikováno v:
Physical Review B. 70
NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orienta ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482e0d5f691da010214ae79874f7642f
https://doi.org/10.1103/physrevb.70.235307
https://doi.org/10.1103/physrevb.70.235307
Publikováno v:
MRS Proceedings. 745
The reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86b87edbe2f3ee33820632ab1811b22
https://doi.org/10.1557/proc-745-n4.8
https://doi.org/10.1557/proc-745-n4.8
Publikováno v:
MRS Proceedings. 745
The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si1-xGex films with x=0.18, 0.32 and 0.37 is studied. No NiSi2 is found in these samples even after annealing at 850 °C, which can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abae7b6f44e27f5d7a89931355afc80
https://doi.org/10.1557/proc-745-n4.9
https://doi.org/10.1557/proc-745-n4.9