Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Johan Vertommen"'
Autor:
Soeren Steudel, Johan Vertommen, Emmanuel Le Boulbar, Giuseppe Buscemi, Lars Bach, Stefaan Van Huylenbroeck, Hariharan Arumugam, Douglas Charles La Tulipe, Joeri De Vos, Andy Miller, Haris Osman, Kenneth June Rebibis
Publikováno v:
SID Symposium Digest of Technical Papers. 53:748-751
Autor:
Charlotte Chahine, Nader Shamma, David Hellin, Johan Vertommen, Michael Kubis, Katja Viatkina, Daniel Sobieski, Benjamin Kam, Philippe Leray, Liesbeth Reijnen, Melisa Luca, Rich Wise, Guillaume Mernier, Mircea Dusa, Patrick Jaenen, Girish Dixit, Jan Mulkens
Publikováno v:
SPIE Proceedings.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD unifor
Publikováno v:
ECS Transactions. 41:189-196
Silicon nano-pillars as test structures for quantitative evaluation of advanced wafer drying are presented. The method consists of the use of pillar structures with an aspect ratio up to 28 in combination with top-down SEM inspection and subsequent i
Publikováno v:
Microelectronic Engineering. 88:21-27
The removal process of the La"2O"3/HfO"2 dielectric and of the residues after metal gate etch are discussed. The challenges are presented and related to the specific physico-chemical properties of La-containing compounds. Solutions based on optimizat
Autor:
Christa Vrancken, David Hellin, Werner Boullart, J. Geypen, Vasile Paraschiv, I. Vos, Hugo Bender, Guglielma Vecchio, Johan Vertommen
Publikováno v:
ECS Transactions. 25:29-36
A dry-wet patterning process for La2O3/HfO2-containing high-κ/ metal gate stacks was successfully developed. The process meets the stringent requirements of complete removal of the high-κ layers and metal-containing sidewall residues without induci
Autor:
Thierry Conard, Werner Boullart, Johan Vertommen, Olivier Richard, Steven Demuynck, I. Vos, David Hellin
Publikováno v:
ECS Transactions. 11:403-407
For every new technology node, the specifications for different processing steps become more stringent. For cleaning, one strives to continuously reduce the loss of substrate and film thickness while maintaining a high cleaning efficiency. Short and
Autor:
Johan Vertommen, Stephan Beckx, V. Paraschiv, B. Coenegrachts, Serge Biesemans, K. Henson, S. Degendt, Patrick Jaenen, S. Vanhaelemeersch, S. Locorotondo, M. Demand, Denis Shamiryan, Werner Boullart, Martine Claes
Publikováno v:
Microelectronics Reliability. 45:1007-1011
We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium- k and high- k dielectrics have been defined. Source/drain silicon recess has been characterized for different s
Autor:
Johan Vertommen, Lars-Ake Ragnarsson, M.M. Heyns, G.S. Lujan, J.C. Hooker, Kirklen Henson, R.J.P. Lander, J.D. Chen, Wilman Tsai, Wim Deweerd, Tom Schram, K. De Meyer, S. De Gendt
Publikováno v:
Microelectronics Reliability. 45:779-782
Direct-etched HfO2/TaN nMOS transistors were fabricated. The performance of the transistors with aggressively scaled EOT is comparable or better than that of SiO2/poly transistors. The performance enhancement requires a combination of EOT scaling and
Publikováno v:
Phys. Chem. Chem. Phys.. 7:1187-1193
The rate constants for the combination reactions CF3 + CF3 and CF3 + F at 290 K and helium pressures of ≈1–6 Torr have been determined, using clean chemical sources of CF3, by means of discharge flow-molecular beam sampling-threshold ionisation m
Publikováno v:
Journal of Photopolymer Science and Technology. 11:597-612