Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Johan, Swerts"'
Autor:
Valeria Founta, Jean-Philippe Soulié, Ingrid De Wolf, Joris Van De Vondel, Johan Swerts, Zsolt Tőkei, Christoph Adelmann
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f499888afa2f7d5bed2bb72827541c9
https://doi.org/10.1109/edtm55494.2023.10103023
https://doi.org/10.1109/edtm55494.2023.10103023
Autor:
Simon Van Beek, Koen Martens, Philippe Roussel, Yueh Chang Wu, Woojin Kim, Siddharth Rao, Johan Swerts, Davide Crotti, Dimitri Linten, Gouri Sankar Kar, Guido Groeseneken
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055909-055909-6 (2018)
STT-MRAM is a promising non-volatile memory for high speed applications. The thermal stability factor (Δ = Eb/kT) is a measure for the information retention time, and an accurate determination of the thermal stability is crucial. Recent studies show
Externí odkaz:
https://doaj.org/article/fb0d176dce464a4f923e3918ec51ad03
Autor:
Mauricio Manfrini, Adrien Vaysset, Danny Wan, Eline Raymenants, Johan Swerts, Siddharth Rao, Odysseas Zografos, Laurent Souriau, Khashayar Babaei Gavan, Nouredine Rassoul, Dunja Radisic, Miroslav Cupak, Morin Dehan, Safak Sayan, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, Dan Mocuta, Iuliana P. Radu
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055921-055921-6 (2018)
With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel
Externí odkaz:
https://doaj.org/article/3f5c305de3ab449fb4b079fd3d74e315
Autor:
Bart F. Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P. Radu, Guido Groeseneken, Christophe Detavernier, Johanna K. Jochum, Margriet Van Bael, Kristiaan Temst, Amit Shukla, Shinji Miwa, Yoshishige Suzuki, Koen Martens
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055933-055933-6 (2017)
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or using an adjac
Externí odkaz:
https://doaj.org/article/9b2e2c6d21644ac8a39534c0d78cb527
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b901c120e0b229c03680846070106b6
https://doi.org/10.1109/iitc52079.2022.9881310
https://doi.org/10.1109/iitc52079.2022.9881310
Autor:
Valeria Founta, Jean-Philippe Soulié, Kiroubanand Sankaran, Kris Vanstreels, Karl Opsomer, Pierre Morin, Pieter Lagrain, Alexis Franquet, Danielle Vanhaeren, Thierry Conard, Johan Meersschaut, Christophe Detavernier, Joris Van de Vondel, Ingrid De Wolf, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::956d2de7d2438d87c22d241aaaaec21e
https://doi.org/10.2139/ssrn.4048681
https://doi.org/10.2139/ssrn.4048681
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
AlNi, Al 3 Sc, AlCu, and Al 2 Cu thin films have been investigated as potential alternatives for Cu in interconnect metallization schemes. Stoichiometric NiAl thin films of 56 nm thickness show a resistivity of 13.9 μΩ cm after post-deposition anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805e0bc0323fa9b88fdb756bf8b48a33
https://doi.org/10.1109/iitc51362.2021.9537441
https://doi.org/10.1109/iitc51362.2021.9537441
Autor:
Christoph Adelmann, Alexandru Stancu, Guido Groeseneken, Koen Martens, Sebastien Couet, Johan Swerts, Mihaela Popovici, Bart Vermeulen, Kristiaan Temst, Iuliana Radu, Florin Ciubotaru
Publikováno v:
ACS Applied Materials & Interfaces. 11:34385-34393
The recent demonstration of ferroelectricity in ultrathin HfO2 has kickstarted a new wave of research into this material. HfO2 in the orthorhombic phase can be considered the first and only truly n...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdcda0d575074905fb7d63f6dc7b7ec4
https://doi.org/10.1021/acsami.9b07973
https://doi.org/10.1021/acsami.9b07973
Autor:
Sofie Mertens, Siddharth Rao, Thibaut Devolder, Gouri Sankar Kar, Sebastien Couet, Johan Swerts
Publikováno v:
IEEE Magnetics Letters
IEEE Magnetics Letters, IEEE, 2019, 10, pp.1-4. ⟨10.1109/LMAG.2019.2940572⟩
IEEE Magnetics Letters, IEEE, 2019, 10, pp.1-4. ⟨10.1109/LMAG.2019.2940572⟩
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::400c6f3b75f9ba046b5909b665595b13
https://doi.org/10.1109/lmag.2019.2940572
https://doi.org/10.1109/lmag.2019.2940572
Autor:
Wouter Devulder, Daniele Garbin, Sergiu Clima, Gabriele Luca Donadio, Andrea Fantini, Bogdan Govoreanu, Christophe Detavernier, Larry Chen, Michael Miller, Ludovic Goux, Sven Van Elshocht, Johan Swerts, Romain Delhougne, Gouri Sankar Kar
Publikováno v:
Thin Solid Films. 753:139278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6490f8fd01d7d71358871573d41af5c5
https://doi.org/10.1016/j.tsf.2022.139278
https://doi.org/10.1016/j.tsf.2022.139278