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Energy levels in polarization superlattices: a comparison of continuum strain models

Autor: Jogai, B., Albrecht, J. D., Pan, E.

Publikováno v: Semicond. Sci. Technol. 19, 733 (2004)

A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels. Two continuum strain model

Externí odkaz: http://arxiv.org/abs/cond-mat/0311040

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Electromechanical coupling in free-standing AlGaN/GaN planar structures

Autor: Jogai, B., Albrecht, J. D., Pan, E.

Publikováno v: Journal of Applied Physics 94, 6566 (2003)

The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are

Externí odkaz: http://arxiv.org/abs/cond-mat/0306323

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The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

Autor: Jogai, B., Albrecht, J. D., Pan, E.

Publikováno v: Journal of Applied Physics 94, 3984 (2003)

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of

Externí odkaz: http://arxiv.org/abs/cond-mat/0306297

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