Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Joerg Siegert"'
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-12 (2024)
Abstract More than Moore technology is driving semiconductor devices towards higher complexity and further miniaturization. Device miniaturization strongly impacts failure analysis (FA), since it triggers the need for non-destructive approaches with
Externí odkaz:
https://doaj.org/article/2fe7168ed86644a8af660c49d4b1a749
Autor:
Eva Kozic, Jördis Rosc, Franz Schrank, René Hammer, Joerg Siegert, Roland Brunner, Bernhard Sartory
Publikováno v:
Microelectronics Reliability. :262-266
In the context of More than Moore 3D integration concepts, the μm to nm sized failure detection and analysis represents a highly demanding task. In this work, micron sized artificially induced metallization defects in open TSVs are detected by scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91ea2fd15d2855b2ec4417cc141d096
https://doi.org/10.1016/j.microrel.2018.07.075
https://doi.org/10.1016/j.microrel.2018.07.075
Autor:
Franz Schrank, Bianca Boettge, Joerg Siegert, Cathal Cassidy, Falk Naumann, Ronny Gerbach, Matthias Petzold
Publikováno v:
ECS Transactions. 50:253-262
Low-temperature plasma activated wafer bonding is an important technology for the 3D integration of semiconductor devices, such as sensors and CMOS devices integrated on opposite sides on the same chip. In a volume production environment, monitoring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e2dea9b95e903a1745ce6f8ffeed76d
https://doi.org/10.1149/05007.0253ecst
https://doi.org/10.1149/05007.0253ecst
Autor:
Gerald Urban, Franz Schrank, Anton Koeck, E. Brunet, Karl Rohracher, Joerg Siegert, O. Yurchenko, E. Laubender, G.C. Mutinati, Stephan Steinhauer, Martin Schrems
Publikováno v:
ESSDERC
We present gas sensor devices based on ultrathin SnO2 films, which are integrated on CMOS fabricated micro- hotplate (µhp) chips. Bimetallic nanoparticles (NPs) such as PdAu, PtAu, and PdPt have been synthesized for optimizing the sensing performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603c34ae838c32747093eb73e9adc34f
https://doi.org/10.1109/essderc.2014.6948762
https://doi.org/10.1109/essderc.2014.6948762
Autor:
Franz Schrank, Siegfried Selberherr, Ewald Stueckler, Jochen Kraft, Joerg Siegert, Martin Schrems, Peter Dorfi
Publikováno v:
ESSDERC
3D integration of functions such as sensors and circuit elements enables miniaturized and cost-effective smart systems. Wirebonds are replaced by Through Silicon Vias (TSVs) and Wafer Level Packaging (WLP) for shorter conductive paths and reduced for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede2fd740fb8b8bf1db432e828071ada
https://doi.org/10.1109/essderc.2014.6948785
https://doi.org/10.1109/essderc.2014.6948785
Autor:
Christian Patzig, Jens Beyersdorfer, Joerg Siegert, Franz Schrank, Matthias Petzold, Viorel Dragoi, Jan-Paul Krugers, Peter Czurratis, Sebastian Brand
Publikováno v:
12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications-ECS Fall 2012 Meeting, 7 October 2012 through 12 October 2012, Honolulu, HI, 7, 50, 227-239
In this paper, a brief summary of potential defect formation and failure characteristics for low temperature plasma-assisted Si wafer bonding in correlation to different influencing factors is given. In terms of a failure catalogue classification, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87cbab5b9b04a365b00d42c7905576f6
http://resolver.tudelft.nl/uuid:9f249e39-4efe-422e-b32d-a57d876733c4
http://resolver.tudelft.nl/uuid:9f249e39-4efe-422e-b32d-a57d876733c4
Publikováno v:
SPIE Proceedings.
PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices, and pulse oximeters. The possibility to combine and to integrate the fabrication of the sensor with its signal con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670fe0fadf87729cd40cb8c20f3a3724
https://doi.org/10.1117/12.842231
https://doi.org/10.1117/12.842231
Publikováno v:
ECS Meeting Abstracts. :2983-2983
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4459e875f2acda6fdbb9e9bdde29a51d
https://doi.org/10.1149/ma2012-02/40/2983
https://doi.org/10.1149/ma2012-02/40/2983