Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Joerg Pezoldt"'
Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix
Autor:
Shantonu Biswas, Andreas Schoeberl, Yufei Hao, Johannes Reiprich, Thomas Stauden, Joerg Pezoldt, Heiko O. Jacobs
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
To realize multilayer stretchable printed circuit boards (SPCBs), advancements in industrially-viable materials and processing methods are required. Here, the authors report multilayer SPCBs with electrical wiring capable of interconnecting isolated
Externí odkaz:
https://doaj.org/article/0ab3a157fc134b329248a18279654b8e
Autor:
Bernd Haehnlein, Maria Kellner, Maximilian Krey, Alireza Nikpourian, Joerg Pezoldt, Steffen Michael, Hannes Toepfer, Stefan Krischok, Katja Tonisch
Publikováno v:
SSRN Electronic Journal.
Autor:
Joerg Pezoldt, S. Mathew, Mikhail Nestoklon, S. P. Lebedev, D. Yu. Usachov, Alexander N. Smirnov, Alexander A. Lebedev, V. Yu. Davydov, A. V. Zubov, I. A. Eliseyev, P. A. Dementev, Kirill A. Bokai
Publikováno v:
Semiconductors. 53:1904-1909
Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were grown by thermal destruction of the Si-face of the 4H-SiC substrate. Analysis of the results le
Autor:
Joerg Pezoldt, Francisco M. Morales, Heike Bartsch, José Manuel, Jens Muller, Rafael García, J.J. Jiménez, Heiko O. Jacobs, Jonas Breiling
Publikováno v:
Ceramics International. 45:9114-9125
Three GaN layers grown on polished AlN buffer films previously sputtered on Low-Temperature Co-fired Ceramic substrates have been studied by X-Ray Diffraction, Atomic Force Microscopy and Electron Microscopy related techniques. This allowed to assess
Publikováno v:
Journal of Vacuum Science & Technology B. 40:030602
In this paper, we introduce analog nonvolatile random access memory cells for neuromorphic computing. The analog memory cell [Formula: see text] channel is designed based on the simulation model including Fowler–Nordheim tunneling through a charge-
Autor:
Joerg Pezoldt, Alexander N. Smirnov, V. Yu. Davydov, Mikhail S. Dunaevskiy, I. A. Eliseyev, E. V. Gushchina, Kirill A. Bokai, D. Yu. Usachov, Alexander A. Lebedev, Sergey P. Lebedev
Publikováno v:
Semiconductors. 52:1882-1885
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is sho
Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix
Autor:
Yufei Hao, Heiko O. Jacobs, Johannes Reiprich, Shantonu Biswas, Joerg Pezoldt, Andreas Schoeberl, Thomas Stauden
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Nature Communications
Nature Communications
Conventional rigid electronic systems use a number of metallization layers to route all necessary connections to and from isolated surface mount devices using well-established printed circuit board technology. In contrast, present solutions to prepar
Autor:
Alexander N. Smirnov, Joerg Pezoldt, Bernd Hähnlein, Sergey P. Lebedev, Marina G. Mynbaeva, V. Yu. Davydov, V. S. Levitskii, A. A. Lebedev, I. A. Eliseyev, M. M. Kulagina
Publikováno v:
Technical Physics Letters. 43:849-852
We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2,
Autor:
Johannes Reiprich, Thomas Stauden, Joerg Pezoldt, Andreas Bund, Adriana Ispas, Nishchay A. Isaac, Heiko O. Jacobs, Leslie Schlag, Helene Nahrstedt
Publikováno v:
Journal of Aerosol Science. 151:105652
This communication uncovers missing fundamental elements and an expanded model of gas phase electrodeposition; a relatively new and in large parts unexplored process, which combines particle generation, transport zone and deposition zone in an intera
Autor:
Robert Dubreuil, Jonny Tot, Rafael García, Svetozar Andreev, M. Fischer, Dimiter Alexandrov, Francisco M. Morales, J.J. Jiménez, José Manuel, Bertrand Lacroix, Heike Bartsch, Valentin Videkov, Joerg Pezoldt, Jens Mueller, Boriana Tzaneva
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the L