Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Joerg Amelung"'
Publikováno v:
SID Symposium Digest of Technical Papers. 38:860-863
Highly efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for the integration into a CMOS-process. An orange emitting phosphorescent OLED-stack with doped charge transport layers was prepared on different types of CMOS sub
Autor:
Joerg Amelung, Claus Luber, Yuto Tomita, M. Toerker, Karl Leo, Michael Eritt, Karsten Fehse, Qiang Huang, Frank Loeffler, Karsten Walzer, Christian Albrecht May
Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ee8b3843fa4346f43a36e9e6dd061ee
https://publica.fraunhofer.de/handle/publica/213497
https://publica.fraunhofer.de/handle/publica/213497
Autor:
Uwe Vogel, M. Toerker, Hans-Jürgen Holland, Yuto Tomita, Harald Cholewa, Gerd Bunk, Christian Albrecht May, Karl Leo, Frank Loeffler, Claus Luber, Andreas Heinig, Ruediger Hermann, Joerg Amelung, Werner Jeroch, Michael Eritt
Publikováno v:
SPIE Proceedings.
Organic light-emitting diodes (OLED) have to be improved to achieve new market segments in displays and lighting applications. We present important steps towards achieving this goal in a combination of highly efficient devices, manufacturing and new
Publikováno v:
SPIE Proceedings.
Modern UV-lithography is searching for new highly parallel writing concepts. Spatial light modulation (SLM) offers such possibilities but special emphasis must be put on the ability of SLM devices to handle ultraviolet light (UV). We designed and fab
Publikováno v:
SID Symposium Digest of Technical Papers. 37:979
Highly efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for the integration into a CMOS-process. Different OLED-stacks with doped charge transport layers were prepared on different two metal layer CMOS test substrates wi