Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Joel Schleeh"'
Autor:
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian, Giuseppe Moschetti, Joel Schleeh, Thilo Bauch, Jan Grahn
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085004-085004-4 (2019)
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT
Externí odkaz:
https://doaj.org/article/2d07b1e5649845e8a79e6c4111b8b85d
Autor:
Jan Grahn, Joel Schleeh, Eunjung Cha, Niklas Wadefalk, Arsalan Pourkabirian, Silvia Tuzi, Giuseppe Moschetti, Per-Åke Nilsson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. :1-10
We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3–14 and 16–28 GHz. The 0.
Autor:
Jan Stake, Joel Schleeh, Slavko Dejanovic, Anders Emrich, Peter Sobis, Vladimir Drakinskiy, Martin Anderberg
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
Atmospheric science based on space-borne millimeter wave measurements require reliable and state-of-the-art receivers. In particular, the water vapor line at 183.3 GHz motivates the development of sensitive mixers at this frequency. Traditional assem
Autor:
Joel Schleeh, Arsalan Pourkabirian, David Niepce, Jan Grahn, Isabel Harrysson Rodrigues, Giuseppe Moschetti, Thilo Bauch
Publikováno v:
2019 Compound Semiconductor Week (CSW).
This work addresses the angular dependence of DC properties in InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90 degrees towards a magnetic field of 14 T, the maximum output drain current Ids was r
Autor:
David Niepce, Isabel Harrysson Rodrigues, Thilo Bauch, Giuseppe Moschetti, Joel Schleeh, Arsalan Pourkabirian, Jan Grahn
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085004-085004-4 (2019)
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19b6e6b4b617f560ab927a5501355de6
Autor:
Joel Schleeh, Arvid Hammar, Anders Emrich, Niklas Wadefalk, Jan Stake, Peter Sobis, Vladimir Drakinskiy
Publikováno v:
The Review of scientific instruments. 89(5)
We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the international submillimetre airborne radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate freque
Publikováno v:
IEEE Transactions on Electron Devices. 62:532-537
We present a study based on pulsed measurement results of the kink effect observed on the $I$ – $V$ output characteristics in InGaAs/InAlAs/InP pseudomorphic high-electron mobility transistors (InP pHEMTs) at cryogenic temperatures. Pulsed measurem
Autor:
Austin J. Minnich, Jan Grahn, Niklas Wadefalk, Per-Åke Nilsson, Javier Mateos, Joel Schleeh, Ignacio Iniguez-de-la-Torre
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
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Thermal dissipation at the active region of electronic devices is a fundamental process of considerable importance1–3. Inadequate heat dissipation can lead to prohibitively large temperature rises that degrade performance4–7, and intensive e orts
Autor:
Eunjung Cha, Giuseppe Moschetti, Jan Grahn, Niklas Wadefalk, Silvia Tuzi, Yu-lung Tang, Per-Åke Nilsson, Joel Schleeh, Arsalan Pourkabirian, Jacob Kooi
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
A cryogenic low noise amplifier that operates across the E and W-bands, from 65 GHz to 116 GHz, has been developed using 0.1-μm InP HEMT technology. Such wideband performance makes this work suitable for the ALMA telescope where two of its bands, 67
Autor:
Giuseppe Moschetti, G. Alestig, J. Halonen, Jan Grahn, Joel Schleeh, Niklas Wadefalk, Arsalan Pourkabirian, Eunjung Cha, Bengt Nilsson, Per-Åke Nilsson
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95–13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cry