Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Joel N. Schulman"'
Autor:
John D. Dow, Joel N. Schulman
Publikováno v:
International Journal of Quantum Chemistry. 20:437-443
Many-body effects on the core-valence-valence Auger lineshape of Li are evaluated in a change-of-mean-field, free-electron model.
Autor:
Joel N. Schulman, James H. Schaffner, Yakov Royter, Jonathan J. Lynch, Y. Yoon, H.P. Moyer, Marko Sokolich, B. Hughes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:1592-1600
An analytical model and supporting measured data are presented for a preamplified W-band radiometer with a zero-bias detector appropriate for commercial millimeter-wave imaging cameras. Basic radiometer parameters, including RF bandwidth, are compute
Publikováno v:
IEEE Electron Device Letters. 29:536-539
InAs/AlSb/GaSb backward diodes are used for millimeter-wave square-law power detection. A new heterostructure design with low capacitance, low resistance, and high curvature coefficient as compared to previous designs is presented. Voltage sensitivit
Publikováno v:
IEEE Electron Device Letters. 28:336-339
The temperature dependence of the microwave and noise performance of zero-bias Sb-heterostructure backward diodes for millimeter-wave detection have been investigated experimentally. Both the junction capacitance and junction resistance were found to
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:105-110
The temperature dependence of heterostructure backward diodes based on the InAs/AlGaSb/GaSb material system for millimeter-wave detection has been investigated experimentally. Measured dc curvatures of 36 V-1 at 298 K and 74 V-1 at 4.2 K have been ob
Publikováno v:
IEEE Transactions on Electron Devices. 51:1060-1064
The temperature dependence of the current-voltage (I-V) characteristics of InAs-AlSb-GaSb resonant interband tunnel diodes (RITDs) has been investigated from 223 to 423 K. Several device structures were examined, with tunnel barrier thicknesses from
Publikováno v:
IEEE Transactions on Electron Devices. 49:19-24
The microwave frequency performance of InAs/ AlSb/GaSb resonant interband tunneling diodes has been examined experimentally. A bias-dependent small-signal circuit model that matches the measured data well for the full range of measured frequencies (d
Autor:
Adele E. Schmitz, M. Hu, Marko Sokolich, Jonathan J. Lynch, Yakov Royter, H.P. Moyer, C. McGuire, J.H. Schaffner, Joel N. Schulman, R.L. Bowen
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:686-688
A W-band monolithic microwave integrated circuit (MMIC), including an Sb-heterostructure diode on a GaAs substrate, has been demonstrated. The MMIC also includes the RF choke and output shorting capacitor essential to detector circuits. Additional in
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:355-357
The 1/f noise of a series of Sb-heterostructure diodes with varying area has been measured. Standard power law formulas for the frequency and voltage dependence were found adequate to summarize the data. An inverse dependence of voltage noise spectra
Publikováno v:
Proceedings of the IEEE. 86:641-660
The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential applications in very high speed/functionality devices and circuits. Even though much progress