Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Joel M. Murray"'
Publikováno v:
Nonlinear Frequency Generation and Conversion: Materials and Devices XX.
Temperature- and wavelength-dependent values of the ordinary (no) and extra-ordinary refractive index (ne) of GaN and 4H-SiC were measured over wavelength ranges of 1.9 to 7 μm and 1.9 – 5.5 μm, respectively, and over a temperature range of 79 to
Publikováno v:
Web of Science
The uniaxial nonlinear crystals BaGa2GeS6 and BaGa2GeSe6 are characterized in terms of thermal diffusivity and specific heat over a temperature range of -90 to 250 °C for heat propagation along and perpendicular to the c-axis.
Publikováno v:
Conference on Lasers and Electro-Optics.
Recent measurement of refractive indices of binary III-V semiconductors GaN, GaP, GaAs, GaSb, InAs and InSb over temperature range of 77 - 400 K and wavelength range spanning the transmission window of each will be presented.
Publikováno v:
Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII.
Bloembergen and Pershan [1] predicted that along with the transmitted second harmonic beam, a beam at the second harmonic frequency is also reflected from the incident surface of the crystal. Experimental verification of the laws for second harmonic
Publikováno v:
OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED).
Temperature-dependent refractive index values of GaSb were measured at wavelengths between 1.7 and 9.8 micrometers, over a temperature range of 81 to 400 K. A temperature dependent Sellmeier equation was obtained.
Publikováno v:
Laser Congress 2018 (ASSL).
A novel experimental approach, based on re-derivation of the Maker-fringe theory using only controllable physical variables, yielded d-coefficient values d14, d25 and d36, for CdSiP2 and ZnGeP2 from measured 2137-nm second harmonic generation data.
Publikováno v:
Nonlinear Frequency Generation and Conversion: Materials and Devices XVI.
Orientation patterned GaAs and GaP crystals are increasingly being used for frequency conversion of laser beams into desired wavelengths. The ternary alloy InGaAs has smaller band gap energy compared to GaAs and is expected to have a nonlinear optica
Autor:
Peter G. Schunemann, Shekhar Guha, Joel M. Murray, Frank Kenneth Hopkins, Douglas M. Krein, Jean Wei, Kevin T. Zawilski
Publikováno v:
Nonlinear Optics.
Publikováno v:
Conference on Lasers and Electro-Optics.
First demonstration of simultaneous frequency doubling and frequency quadrupling of a pulsed carbon-dioxide laser in a single-grating orientation-patterned Gallium Phosphide crystal grown by hydride vapor phase epitaxy is reported.
Autor:
Frank Kenneth Hopkins, Kevin T. Zawilski, Douglas M. Krein, Peter G. Schunemann, Shekhar Guha, Jean Wei, Joel M. Murray
Publikováno v:
Nonlinear Optics.
Second harmonic generation of a picosecond duration laser beam with 9.3 µm wavelength was used to determine the d coefficient values of CdSiP2, GaP and GaAs, to assess their potential for frequency doubling CO2 lasers.