Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Joel M. Hales"'
Autor:
Joel M. Hales, Adrian Ildefonso, Stephen P Buchner, Ani Khachatrian, Greg Allen, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 70:354-362
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb81931e9bdf587a558b590c4784164
https://doi.org/10.1109/tns.2022.3232724
https://doi.org/10.1109/tns.2022.3232724
Autor:
Codie Mishler, Dale McMorrow, David Wheeler, Adrian Ildefonso, Scott R. Messenger, Joel M. Hales, Roger Van Art, Ani Khachatrian, Scott L. Jordan, Dennis A. Adams, Stephen P. Buchner, Nicholas Budzinski
Publikováno v:
IEEE Transactions on Nuclear Science. 69:429-435
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d690af0520238f7f5784b2ed6dd2cfe2
https://doi.org/10.1109/tns.2021.3129416
https://doi.org/10.1109/tns.2021.3129416
Autor:
S. P. Buchner, Landen D. Ryder, John A. Kozub, Joel M. Hales, Kaitlyn L. Ryder, Ani Khachatrian, Andrew L. Sternberg, Liang Wang, Chuanmin Wang, Robert A. Weller, Robert A. Reed, Dale McMorrow, Yuanfu Zhao, Sharon M. Weiss, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2496-2507
A method to carry out a priori simulations of pulsed-laser-induced single-event effects experiments is reported. Nonlinear optical simulations are conducted to model the 3-D distributions of charge from a laser pulse. These pulsed-laser-induced charg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c86f05139579487d4967b0f9d4aad7c
https://doi.org/10.1109/tns.2021.3111864
https://doi.org/10.1109/tns.2021.3111864
Autor:
Ani Khachatrian, Adrian Ildefonso, Dale McMorrow, Joel M. Hales, Stephen LaLumondiere, Stephen P. Buchner, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 68:617-625
By scanning the charge-deposition profile produced by a pulsed laser throughout a device, the spatially dependent charge-collection efficiency (CCE) can be determined. This is demonstrated by extracting the depth-dependent CCE in two photodiodes. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9df6c16f4a7b780621f5198377ff7750
https://doi.org/10.1109/tns.2021.3049651
https://doi.org/10.1109/tns.2021.3049651
Autor:
Albert Djikeng, George N. Tzintzarov, Patrick S. Goley, Ani Khachatrian, Stephen P. Buchner, Adrian Ildefonso, Prahlad Iyengar, Joel M. Hales, Ryan Bahr, Dale McMorrow, John D. Cressler, Jeffrey W. Teng, Milad Frounchi
Publikováno v:
IEEE Transactions on Nuclear Science. 68:785-792
Optical single-event transients (OSETs) were measured for the first time in integrated silicon-photonic waveguides. A custom test fixture and novel experimental setup were used at the U.S. Naval Research Laboratory to induce a dense cloud of electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7175a167f2f197bba2302b21f8aacdf1
https://doi.org/10.1109/tns.2021.3051802
https://doi.org/10.1109/tns.2021.3051802
Autor:
Stephen P. Buchner, Daniele M. Monahan, Robert A. Weller, Ronald D. Schrimpf, Stephen LaLumondiere, John A. Kozub, Dale McMorrow, J. P. Bonsall, Joel M. Hales, Liang Wang, Sharon M. Weiss, Ani Khachatrian, Chuanmin Wang, En Xia Zhang, Landen D. Ryder, Yuanfu Zhao, Kaitlyn L. Ryder, Andrew L. Sternberg, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 68:626-633
Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between different sources. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e449e3228ed3da3319d0f3035cfce7c
https://doi.org/10.1109/tns.2021.3060339
https://doi.org/10.1109/tns.2021.3060339
Autor:
Joel M. Hales, Stephen P. Buchner, Jeffrey H. Warner, John D. Cressler, Adrian Ildefonso, Ani Khachatrian, George N. Tzintzarov, Dale McMorrow, Stephen LaLumondiere, Delgermaa Nergui, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:81-90
A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by heavy ions. In this approach, which utilizes an axicon rather than a spherical lens, the conven
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d467c380fe3d491743d5c939c87b6437
https://doi.org/10.1109/tns.2019.2950431
https://doi.org/10.1109/tns.2019.2950431
Autor:
Dale McMorrow, Ronald D. Schrimpf, Kaitlyn L. Ryder, Andrew L. Sternberg, Liang Wang, Robert A. Weller, Robert A. Reed, Sharon M. Weiss, Ani Khachatrian, Chuanmin Wang, S. P. Buchner, Joel M. Hales, John A. Kozub, En Xia Zhang, Landen D. Ryder, Yuanfu Zhao
Publikováno v:
IEEE Transactions on Nuclear Science. 67:57-62
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with the experimental two-photon absorption laser-induced collected charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a38977f37acb78e23733d7190c4e47
https://doi.org/10.1109/tns.2019.2943472
https://doi.org/10.1109/tns.2019.2943472
Autor:
George N. Tzintzarov, Joel M. Hales, Ani Khachatrian, Patrick S. Goley, Dale McMorrow, Delgermaa Nergui, Stephen P. Buchner, Jeffrey H. Warner, Adrian Ildefonso, John D. Cressler, Anup P. Omprakash
Publikováno v:
IEEE Transactions on Nuclear Science. 67:71-80
A comparison of heavy-ion-induced single-event transients (SETs) in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06174130d3372b080ce636172688f7aa
https://doi.org/10.1109/tns.2019.2950864
https://doi.org/10.1109/tns.2019.2950864
Autor:
Adrian Ildefonso, Joel M. Hales, Ani Khachatrian, Jeffrey W. Teng, George N. Tzintzarov, Delgermaa Nergui, Brett L. Ringel, Uppili Raghunathan, Vibhor Jain, John D. Cressler, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6850b061e5213a36ffb723f487ff1a4e
https://doi.org/10.1109/tns.2023.3255169
https://doi.org/10.1109/tns.2023.3255169