Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Joel C. Wong"'
Publikováno v:
IEEE Microwave and Wireless Components Letters. 30:1061-1064
Heterogeneous integration of IC chiplets into systems on a chip (SoC) is further revolutionizing the semiconductor industry. This letter introduces a metal embedded chiplet assembly for microwave integrated circuit (MECAMIC) technology that uses high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2170226fc5b9b37c26a0dd6b10b72af
https://doi.org/10.1109/lmwc.2020.3025126
https://doi.org/10.1109/lmwc.2020.3025126
Autor:
Herrault Florian G, David F. Brown, Joel C. Wong, Yan Tang, Hasan Sharifi, D. Regan, Helen Fung
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:1579-1582
This letter provides an overview of the metal-embedded chiplet assembly for microwave integrated circuits (MECAMICs) technology. MECAMIC is a 2.5-D wafer-level packaging approach that provides seamless heterogeneous integration capabilities of compou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bfc17eca90412a6aadcb8c098f32384
https://doi.org/10.1109/tcpmt.2020.3012505
https://doi.org/10.1109/tcpmt.2020.3012505
Autor:
Joel C. Wong, Haw Y. Tai, Helen Fung, D. Regan, D. F. Brown, Dayward Santos, Eric M. Prophet, Shawn D. Burnham, Miroslav Micovic, A. Kurdoghlian, Jesus Magadia, Isaac Khalaf, Yan Tang, Bob Grabar
Publikováno v:
IEEE Electron Device Letters. 38:1708-1711
We report the state-of-the-art $V$ -band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The $200~\mu \text{m}$ ( $4\times 50 ~\mu \text{m}$ ) wide GaN DHFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0e2db75cf2de7515da41fefbef6647
https://doi.org/10.1109/led.2017.2763940
https://doi.org/10.1109/led.2017.2763940
Publikováno v:
BCICTS
We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::553fad1db4344f2c697c559ba0a0fe1d
https://doi.org/10.1109/bcicts45179.2019.8972773
https://doi.org/10.1109/bcicts45179.2019.8972773
Autor:
David F. Brown, Yan Tang, Miroslav Micovic, Andrea Corrion, Robert G. Nagele, Adele E. Schmitz, Keisuke Shinohara, Helen Fung, Peter Chen, John F. Robinson, Alexandros Margomenos, S. Kim, Thomas C. Oh, Joel C. Wong, D. Regan
Publikováno v:
IEEE Transactions on Electron Devices. 60:2982-2996
In this paper, we report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depleti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee70c1c31669397055b1a6ecbafe36f
https://doi.org/10.1109/ted.2013.2268160
https://doi.org/10.1109/ted.2013.2268160
Autor:
Joe Tai, Joel C. Wong, Helen Fung, Hector L. Bracamontes, Eric M. Prophet, David F. Brown, A. Kurdoghlian, D. Regan, C. McGuire, Miroslav Micovic, Dayward Santos, Shawn D. Burnham, Adele E. Schmitz, Herrault Florian G, Isaac Khalaf, Yan Tang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0619ddec3291dba53fc3e0a76909659d
https://doi.org/10.1109/iedm.2016.7838337
https://doi.org/10.1109/iedm.2016.7838337
Autor:
Isaac Khalaf, Adam J. Williams, Miroslav Micovic, Joel C. Wong, David F. Brown, Andrea Corrion
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:030603
Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337fd3b44b058de59c3da48685f55794
https://doi.org/10.1116/1.5012530
https://doi.org/10.1116/1.5012530
Autor:
David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 34:1118-1120
We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5525cdf8d7f6c5a7ffd26d186fe5dc4
https://doi.org/10.1109/led.2013.2273172
https://doi.org/10.1109/led.2013.2273172