Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Joel Barnett"'
Publikováno v:
2005 Annual Conference Proceedings.
Publikováno v:
2004 Annual Conference Proceedings.
Publikováno v:
Chest. 160:A1224
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P112-P116
This work studies the effect of wet chemical treatment of III-V based epitaxial layers. III-As high mobility channel materials are considered to be promising candidates and being evaluated for replacing Si NMOS channel in future CMOS devices to susta
Publikováno v:
Solid State Phenomena. 187:33-36
The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs and high mobility substrates, including compound semiconductors (III-V). At these technology nodes, abrupt channel
Autor:
Raj Jammy, Jungwoo Oh, Prashant Majhi, Richard Hill, Jeff Huang, Wei-Yip Loh, Paul Kirsch, Niti Goel, Joel Barnett, Chanro Park, J. Price
Publikováno v:
ECS Transactions. 35:335-344
The superior transport properties of III-V materials makes them attractive choices to enable improved performance at low power. This paper examines the module targets and challenges for III-V materials to be successfully integrated for high performan
Publikováno v:
Microelectronic Engineering. 87:1661-1664
This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free
Autor:
Toru Kinashi, Carolyn F. H. Gondran, Chris M. Sparks, Diane K. Michelson, Hikari Takahara, Angela Martinez, Seung Chul Song, Joel Barnett, Hiroyuki Murakami
Publikováno v:
Solid State Phenomena. 134:285-288
Autor:
Seung-Chul Song, Chan-Gyeong Park, Muhammad Mustafa Hussain, Paul Kirsch, Joel Barnett, Byoung Hun Lee, Chanro Park, Raj Jammy
Publikováno v:
ECS Transactions. 11:315-329
As MOSFET scales below 45nm, conventional SiO2 cannot sustain equivalent oxide thickness (EOT) and leakage current requirements set in the International Technology Roadmap for Semiconductors (ITRS), due to the limitation of physical-thickness scaling
Autor:
Joseph C. Woicik, Gennadi Bersuker, Joel Barnett, Byoung Hun Lee, Patrick S. Lysaght, Brendan Foran
Publikováno v:
ECS Transactions. 1:313-322
HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N i