Discovery of atomic clock-like spin defects in simple oxides from first principles

Autor: Joel Davidsson, Mykyta Onizhuk, Christian Vorwerk, Giulia Galli

Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)

Abstract Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-princ

Externí odkaz: https://doaj.org/article/f9dd4a21c6904be696ce544778db3529

Absorption versus adsorption: high-throughput computation of impurities in 2D materials

Autor: Joel Davidsson, Fabian Bertoldo, Kristian S. Thygesen, Rickard Armiento

Publikováno v: npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-7 (2023)

Abstract Doping of a two-dimensional (2D) material by impurity atoms occurs via two distinct mechanisms: absorption of the dopants by the 2D crystal or adsorption on its surface. To distinguish the relevant mechanism, we systematically dope 53 experi

Externí odkaz: https://doaj.org/article/e1ae7f5ea6b74d1aadc2d89bb69ee30e

Absorption $\textit{versus}$ Adsorption: High-Throughput Computation of Impurities in 2D Materials

Autor: Joel Davidsson, Fabian Bertoldo, Kristian S. Thygesen, Rickard Armiento

Publikováno v: Davidsson, J, Bertoldo, F, Thygesen, K S & Armiento, R 2023, ' Absorption versus adsorption : high-throughput computation of impurities in 2D materials ', npj 2D Materials and Applications, vol. 7, no. 1, 26 . https://doi.org/10.1038/s41699-023-00380-6

Doping of a two-dimensional (2D) material by impurity atoms occurs \textit{via} two distinct mechanisms: absorption of the dopants by the 2D crystal or adsorption on its surface. To distinguish the relevant mechanism, we systematically dope 53 experi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62acc229bbdcbd8ca8a6d23adfdda484

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Autor: Joel Davidsson, Viktor Ivády, Rickard Armiento, N T Son, Adam Gali, Igor A Abrikosov

Publikováno v: New Journal of Physics, Vol 20, Iss 2, p 023035 (2018)

Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate

Externí odkaz: https://doaj.org/article/fdf11d3976234a4ca09763455da72d28

Theoretical polarization of zero phonon lines in point defects

Autor: Joel, Davidsson

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 32(38)

In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::64013bd0afe0ff3a4d3510c24133b19f
https://pubmed.ncbi.nlm.nih.gov/32434177