Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Joe W. McPherson"'
Autor:
Joe W. McPherson, Charles Slayman
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
All materials and devices tend to degrade with time. For this reason, reliability physics is of great theoretical and practical importance. Reliability investigations generally start with measuring the degradation rate for a material/device under str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58813e36574371410e1a1c14260b8e98
https://doi.org/10.1109/irps.2016.7574500
https://doi.org/10.1109/irps.2016.7574500
Autor:
R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:436-449
We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a76489e2600454801bf37a125562340
https://doi.org/10.1109/tdmr.2004.837210
https://doi.org/10.1109/tdmr.2004.837210
Publikováno v:
Journal of Applied Physics. 88:5351-5359
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E-model controversy that has existed for many years as to the true physics behind time-dependent dielectric breakdown (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802b59e8aa54ab2a25010c6848db32d7
https://doi.org/10.1063/1.1318369
https://doi.org/10.1063/1.1318369
Autor:
Homi C. Mogul, Joe W. McPherson
Publikováno v:
Journal of Applied Physics. 84:1513-1523
The underlying physics behind the success of the thermochemical E model in describing time-dependent dielectric breakdown (TDDB) in SiO2 thin films is presented. Weak bonding states can be broken by thermal means due to the strong dipolar coupling of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a13d8dc56f683b8228c83e48c1489e9
https://doi.org/10.1063/1.368217
https://doi.org/10.1063/1.368217
Autor:
Joe W. McPherson
Publikováno v:
Reliability Physics and Engineering ISBN: 9783319001210
For a collection of devices, it is critically important to be able to understand the expected failure rate for the devices. For the supplier of such devices, the expected failure rate will be an important indicator of future warranty liability. For t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4801fec1ef338d49f033bb4d54dca12c
https://doi.org/10.1007/978-3-319-00122-7_7
https://doi.org/10.1007/978-3-319-00122-7_7
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Time-dependent dielectric breakdown (TDDB) of low-k dielectrics is reported for fully integrated carbon-doped silica dielectric (SiOC, keff=2.9) at wafer level over a wide range of area and electric-field test conditions at 105degC. In addition, long
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab46de7481f92c4242cfe3426711a743
https://doi.org/10.1109/relphy.2007.369922
https://doi.org/10.1109/relphy.2007.369922
Autor:
G.S. Haase, Joe W. McPherson
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Advanced microelectronics interconnect systems can have metal leads several hundred meters long with minimum metal to metal spacing of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ff8d585ab399fff45a461e4de3a34f
https://doi.org/10.1109/relphy.2007.369921
https://doi.org/10.1109/relphy.2007.369921
Autor:
Joe W. McPherson
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Using a generalized Mie-Gruneisen bonding potential, a quantum mechanical treatment (WKB method) for Si-O bond breakage in silica is presented under the conditions of high electric field, hole injection and hydrogen release. The full spectrum of boun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73b3b103c6db019060a0ffdba3e1ad7
https://doi.org/10.1109/relphy.2007.369893
https://doi.org/10.1109/relphy.2007.369893
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2eeda28cc1effcce7ebdd3088ea1dc4
https://doi.org/10.1109/relphy.2006.251265
https://doi.org/10.1109/relphy.2006.251265
Autor:
M. Kerber, W. Xiong, Joe W. McPherson, G.S. Haase, E.T. Ogawa, T. Pompl, K. Schrufer, T. Schulz, Homi C. Mogul, R. Cleavelin
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Future CMOS technology generations may implement multi-gate architectures according to S. M. Kim et al. (2004), D Ha et al. (2004), S.-Y. Kim et al. (2005), W.-S. Liao et al. (2005), S. Maeda et al. (2004), N. Collaert et al. (2005),and C. Jahan et a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545d69f471cce9d27fe664de8a80214a
https://doi.org/10.1109/relphy.2006.251309
https://doi.org/10.1109/relphy.2006.251309