Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Joe Sumakeris"'
Autor:
Robert Tyler Leonard, Yu Yang, Fangzhen Wu, Ouloide Yannick Goue, Balaji Raghothamachar, Joe Sumakeris, Jianqiu Guo, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 452:39-43
Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e53c9d4cc5362020d0dbeebcf7961fa4
https://doi.org/10.1016/j.jcrysgro.2015.12.028
https://doi.org/10.1016/j.jcrysgro.2015.12.028
Autor:
Michael Dudley, Joe Sumakeris, Fangzhen Wu, Ouloide Yannick Goue, Balaji Raghothamachar, Robert Tyler Leonard, Yu Yang, Jianqiu Guo
Publikováno v:
Journal of Electronic Materials. 45:2045-2050
In addition to pure threading screw dislocations (TSDs), the presence of threading mixed dislocations (TMDs) (with a component) has been reported both in 4H-SiC axial slices (wafers cut parallel to the growth axis) and in commercial offcut wafers (cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a0a6e121cda301d00d62a2a1bfbaad3
https://doi.org/10.1007/s11664-015-4317-0
https://doi.org/10.1007/s11664-015-4317-0
Autor:
Vipindas Pala, Daniel J. Lichtenwalner, Brett Hull, A. Burk, Joe Sumakeris, Edward Van Brunt, S.T. Allen, Sei-Hyung Ryu, Michael J. O'Loughlin, John W. Palmour
Publikováno v:
MRS Advances. 1:81-89
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbc3960387bf62b3d8e55f9fa295c55
https://doi.org/10.1557/adv.2015.57
https://doi.org/10.1557/adv.2015.57
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:860-864
The path to commercializing a 4H - SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H - SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1535012e1b40c4944317f08ff9bf8054
https://doi.org/10.1142/s0129156404002958
https://doi.org/10.1142/s0129156404002958
Publikováno v:
Journal of Electronic Materials. 26:151-159
Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e997bc1dc7f4ce951a5762ddc188a714
https://doi.org/10.1007/s11664-997-0142-4
https://doi.org/10.1007/s11664-997-0142-4
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..
The path to commercializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da474e8586a9454de149eeadab4f0089
https://doi.org/10.1109/lechpd.2004.1549700
https://doi.org/10.1109/lechpd.2004.1549700
The primary focus of the research for this grant has been the atomic layer epitaxy (ALE) of Si; however, the ALE of SiC has also received serious consideration. A Computer assisted study, based on the free energy minimization of a thermodynamic syste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5b106a82a7561a90a850c4ccb392f70
https://doi.org/10.21236/ada231348
https://doi.org/10.21236/ada231348
