Engineering long spin coherence times of spin–orbit qubits in silicon

Autor: Brett C. Johnson, Sven Rogge, Takashi Kobayashi, Dimitrie Culcer, Joost van der Heijden, Nikolay V. Abrosimov, Matthew House, Peter B. Becker, C. Chua, Hans-Joachim Pohl, Michelle Y. Simmons, Helge Riemann, Joe Salfi, Wayne D. Hutchison, Jeffrey C. McCallum

Publikováno v: Nature Materials. 20:38-42

Electron-spin qubits have long coherence times suitable for quantum technologies. Spin–orbit coupling promises to greatly improve spin qubit scalability and functionality, allowing qubit coupling via photons, phonons or mutual capacitances, and ena

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b639ac724ad04eb666f36e038c546c66
https://doi.org/10.1038/s41563-020-0743-3

Valley interference and spin exchange at the atomic scale in silicon

Autor: Michelle Y. Simmons, Juanita Bocquel, Joe Salfi, Sven Rogge, Archana Tankasala, Muhammad Usman, Benoit Voisin, Lloyd C. L. Hollenberg, Rajib Rahman

Publikováno v: Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Nature Communications

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53ccddbcf5db0affc0b309c7182a7e53

Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits

Autor: Zhanning Wang, Sven Rogge, James H. Cullen, Alex R. Hamilton, Joe Salfi, Dimitrie Culcer, E. Marcellina

Publikováno v: npj Quantum Information, Vol 7, Iss 1, Pp 1-8 (2021)

Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee52a21c6015e5dcd7257b95efa42e55
http://arxiv.org/abs/1911.11143

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor

Autor: Joe Salfi, Michelle Y. Simmons, R. Lavieville, Matthew House, S. Barraud, Takashi Kobayashi, Sven Rogge, J. van der Heijden

Publikováno v: Science Advances
Science Advances, 2018, 4 (12), pp.eaat9199. ⟨10.1126/sciadv.aat9199⟩
Science Advances, American Association for the Advancement of Science (AAAS), 2018, 4 (12), pp.eaat9199. ⟨10.1126/sciadv.aat9199⟩

The controllable transition from charge to spin physics for a boron atom in silicon is an essential step to spin-orbit qubits.
Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long dista

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fe6ad2205f22b71f446c31e9bdbc18a
https://doi.org/10.1126/sciadv.aat9199

Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon

Autor: Benoit Voisin, Joe Salfi, Lloyd C. L. Hollenberg, Sven Rogge, Muhammad Usman

Publikováno v: Nanoscale. 9(43)

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of cen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e17868cab66102d0d385af86c651258c
https://pubmed.ncbi.nlm.nih.gov/29082402